Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 65 for “"Compound semiconductor"”.
-
Compound Semiconductor Material Manufacture, Process Improvement
IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are relative to discrete or multi-compound use of Gallium Arsenide or Indium Phosphide [III/V]. For MOVPE …
-
Compound Semiconductor Power Heterojunction Bipolar Transistor Technology
This work will conclude by discussing the lingering issues with the GaN project and the methods in which to solve these issues. It will also discuss the implications of the power amplifier analysis.
-
Fabrication and characterization of compound semiconductor nanostructures
Semiconductor optoelectronic devices are expected to have their performance improved by the use of quantum confinement in the active region with sizes in the range of tenths of nanometers. The decrease in volume of the active region and the modification in the density of states in quantum …
-
Shadow mask assisted heteroepitaxy of compound semiconductor nanostructures
… is a technique enabling selected area epitaxy of semiconductor heterostructures through shadow masks. The objective of this work was the development of the SMMBE technique for the reliable fabrication of compound semiconductor nanostructures of high structural and optical quality. In order to …
-
Optical Characterization of Electrochemically Self-Assembled Compound Semiconductor Nanowires
Semiconductor nanowires have attracted considerable attention as possible source for lasers and optical storage media. We report the fabrication and optical characterization of ZnO and CdS nanowires. The former are produced by electrochemical deposition of Zn inside nanoporous alumina films …
-
III-V compound semiconductor selective area epitaxy on silicon substrates
In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the …
-
Characterization of reactive ion etching of III-V compound semiconductor materials
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for …
-
Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application
Finally, I developed two methods to transfer a GaAs-based device layer on a transparent GaP substrate (for emission wavelength longer than 560 nm), which involve multiple processing techniques. One approach also includes the regrowth step, which further indicates the bonded sample can further be …
-
Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this …
-
Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of …
-
Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01
-
Ion bombardment induced compositional changes in compound semiconductor surfaces studied by XPS combined with LEISS
… evidence of ion beam modification in surfaces of compound semiconductors and GeSi alloy to improve the understanding of the mechanisms responsible for these effects. Before ion bombardment the sample surfaces were analysed nondestructively by Angular Resolved XPS (ARXPS) and LEISS to get the …
-
III-V compound semiconductor integrated charge storage structures for dynamic and non-volatile memory elements.
… of dynamic and nonvolatile memories in III-V compound semiconductors. Currently, III-V semiconductor storage devices consist only of capacitors, where data is destroyed during reading and electrical erasure is difficult. In this work, four devices types were demonstrated that exhibit …
-
Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection
There are considerable interests in the use of infrared (IR) photodetectors, in particular mid- and long-wavelength IR detection, for diverse scientific, civil, and military applications. Devices based on the InAs/GaSb or InAs/InAsSb strained-layer-superlattices (SLSs) have gained special attention …
-
In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first …
-
Carbon doping of compound semiconductor epitaxial layers grown by metalorganic chemical vapor deposition using carbon tetrachloride
A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl$\sb4$ doping and to provide experimental …
-
Development of Compound Semiconductor FET and Integrated Low -Voltage RF MEMS Switch Technology for Reconfigurable MMIC Applications
… to meet the requirements of future systems. Compound semiconductors have had a significant impact on this field, finding commercial success in millimeter-wave integrated circuit (MMIC) and optoelectronic applications due to material advantages over established silicon technology. This work …
-
Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new …
-
An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
… integrated circuits (OEICs) has focused on III-V compound semiconductors such as GaAs-based and InP-based materials because of their superior electronic properties over those of silicon. Recent advances in the fields of Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), as …
Page 1 of 4