Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2020

Author dc:creator

• Choi, Wonsik

Contributors dc:contributor

• Li, Xiuling
• Lyding, Joseph W
• Lee, Minjoo L
• Nam, Sungwoo

• semiconductor nanowire
• selective lateral epitaxy
• selective area epitaxy
• sMIM
• IR-sSNOM

Statement dc:rights

• "Chapter 2 was reproduced with the permission from [W. Choi et al., ""Direct electrical probing of periodic modulation of zinc-dopant distributions in planar gallium arsenide nanowires,"" ACS Nano, vol. 11, no. 2, pp. 1530-1539, 2017.] Copyright [2017] American Chemical Society."

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/106487

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/106487