{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/106487"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/106487","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01","abstract_has_math":false,"creators":["Choi, Wonsik"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Li, Xiuling","Lyding, Joseph W","Lee, Minjoo L","Nam, Sungwoo"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2020,"date_issued":"2020-03-02T22:38:57Z","date_published":"2020-03-02T22:38:57Z","updated_at":"2026-07-22T22:24:47Z","subjects":["semiconductor nanowire","selective lateral epitaxy","selective area epitaxy","sMIM","IR-sSNOM"],"languages":["en"],"rights":["\"Chapter 2 was reproduced with the permission from [W. Choi et al., \"\"Direct electrical probing of periodic modulation of zinc-dopant distributions in planar gallium arsenide nanowires,\"\" ACS Nano, vol. 11, no. 2, pp. 1530-1539, 2017.] Copyright [2017] American Chemical Society.\""],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/106487","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling","Lyding, Joseph W","Lee, Minjoo L","Nam, Sungwoo"]},{"key":"dc:creator","label":"Author","values":["Choi, Wonsik"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2020-03-02T22:38:57Z","2022-03-03T10:15:22Z","2019-12-05","2019-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["semiconductor nanowire","selective lateral epitaxy","selective area epitaxy","sMIM","IR-sSNOM"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["\"Chapter 2 was reproduced with the permission from [W. Choi et al., \"\"Direct electrical probing of periodic modulation of zinc-dopant distributions in planar gallium arsenide nanowires,\"\" ACS Nano, vol. 11, no. 2, pp. 1530-1539, 2017.] Copyright [2017] American Chemical Society.\""]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/106487"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01","The student, Wonsik Choi, accepted the attached license on 2019-12-04 at 16:02.","The student, Wonsik Choi, submitted this Dissertation for approval on 2019-12-04 at 16:32.","This Dissertation was approved for publication on 2019-12-05 at 17:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14698 on 2020-02-28 at 17:37:56","Bottom-up grown III-V compound semiconductor nanowires (NWs) provide a novel building block for electrical and optical devices. Bottom-up III-V NWs can be synthesized by either a vapor-liquid-solid (VLS) or selective area epitaxy (SAE) mechanism. Under the specific VLS NW growth conditions, planar self-aligned NWs can be grown on top of a substrate under a selective lateral epitaxy (SLE) mechanism. In this thesis research, first, the realization of lateral multiple p-n junction gallium arsenide (GaAs) SLE NW grown by metal-organic chemical vapor deposition (MOCVD) reactor is presented. Scanning microwave impedance microscopy (sMIM) and infrared scattering-type near-field optical microscopy (IR-SNOM) scans on top of the NW suggested that p-type zinc dopants are accumulated at twin-plane boundaries of NW. The electrical properties of the SLE GaAs lateral p-n junction were analyzed by measuring two-terminal I-V characteristics of arrays of p-n NW diodes. The I-V characteristics of the devices indicated that the lateral p-n junction was successfully realized with a high rectification ratio of ~106. The gallium phosphide (GaP) SAE NW growth on top of a silicon (Si) substrate will be also introduced. Systemic studies were performed by modulating the following three NW growth conditions: TMGa flow rate, growth temperature, and V/III ratio. By controlling the NW growth parameters, a 97.5% yield of hexagonal NWs was grown on an area of 400 µm × 400 µm. The morphology of the NWs was inspected with a scanning electron microscope (SEM). X-ray diffraction (XRD) analysis was performed on the GaP NWs, and 6.3016 Å of wurtzite (WZ) GaP c-lattice parameter was extracted. Vertical arrays of GaP p-n and p-i-n NW diodes were fabricated. The ideality factor and rectification ratio of p-n GaP NW diode were measured 7 and 10, respectively. The ideality factor and the rectification ratio could be improved to 3.7 and 1000 by introducing an undoped intrinsic layer between n-type and p-type GaP NW.","Made available in DSpace on 2020-03-02T22:38:57Z (GMT). No. of bitstreams: 2 CHOI-DISSERTATION-2019.pdf: 3280922 bytes, checksum: c9f9f184126f776689131ca7fcac93a1 (MD5) LICENSE.txt: 4208 bytes, checksum: 00aae9612f680c13e3420a5fc4938848 (MD5) Previous issue date: 2019-12-05","Embargo set by: Seth Robbins for item 114031 Lift date: 2022-03-02T22:39:04Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Limited Restriction Lifted for Item 114031 on 2022-03-03T10:15:22Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy"]}]}],"canonical_facts":{"dc:contributor":["Li, Xiuling","Lyding, Joseph W","Lee, Minjoo L","Nam, Sungwoo"],"dc:creator":["Choi, Wonsik"],"dc:date":["2020-03-02T22:38:57Z","2022-03-03T10:15:22Z","2019-12-05","2019-12"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01","The student, Wonsik Choi, accepted the attached license on 2019-12-04 at 16:02.","The student, Wonsik Choi, submitted this Dissertation for approval on 2019-12-04 at 16:32.","This Dissertation was approved for publication on 2019-12-05 at 17:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #14698 on 2020-02-28 at 17:37:56","Bottom-up grown III-V compound semiconductor nanowires (NWs) provide a novel building block for electrical and optical devices. Bottom-up III-V NWs can be synthesized by either a vapor-liquid-solid (VLS) or selective area epitaxy (SAE) mechanism. Under the specific VLS NW growth conditions, planar self-aligned NWs can be grown on top of a substrate under a selective lateral epitaxy (SLE) mechanism. In this thesis research, first, the realization of lateral multiple p-n junction gallium arsenide (GaAs) SLE NW grown by metal-organic chemical vapor deposition (MOCVD) reactor is presented. Scanning microwave impedance microscopy (sMIM) and infrared scattering-type near-field optical microscopy (IR-SNOM) scans on top of the NW suggested that p-type zinc dopants are accumulated at twin-plane boundaries of NW. The electrical properties of the SLE GaAs lateral p-n junction were analyzed by measuring two-terminal I-V characteristics of arrays of p-n NW diodes. The I-V characteristics of the devices indicated that the lateral p-n junction was successfully realized with a high rectification ratio of ~106. The gallium phosphide (GaP) SAE NW growth on top of a silicon (Si) substrate will be also introduced. Systemic studies were performed by modulating the following three NW growth conditions: TMGa flow rate, growth temperature, and V/III ratio. By controlling the NW growth parameters, a 97.5% yield of hexagonal NWs was grown on an area of 400 µm × 400 µm. The morphology of the NWs was inspected with a scanning electron microscope (SEM). X-ray diffraction (XRD) analysis was performed on the GaP NWs, and 6.3016 Å of wurtzite (WZ) GaP c-lattice parameter was extracted. Vertical arrays of GaP p-n and p-i-n NW diodes were fabricated. The ideality factor and rectification ratio of p-n GaP NW diode were measured 7 and 10, respectively. The ideality factor and the rectification ratio could be improved to 3.7 and 1000 by introducing an undoped intrinsic layer between n-type and p-type GaP NW.","Made available in DSpace on 2020-03-02T22:38:57Z (GMT). No. of bitstreams: 2 CHOI-DISSERTATION-2019.pdf: 3280922 bytes, checksum: c9f9f184126f776689131ca7fcac93a1 (MD5) LICENSE.txt: 4208 bytes, checksum: 00aae9612f680c13e3420a5fc4938848 (MD5) Previous issue date: 2019-12-05","Embargo set by: Seth Robbins for item 114031 Lift date: 2022-03-02T22:39:04Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Limited Restriction Lifted for Item 114031 on 2022-03-03T10:15:22Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/106487"],"dc:language":["en"],"dc:rights":["\"Chapter 2 was reproduced with the permission from [W. Choi et al., \"\"Direct electrical probing of periodic modulation of zinc-dopant distributions in planar gallium arsenide nanowires,\"\" ACS Nano, vol. 11, no. 2, pp. 1530-1539, 2017.] Copyright [2017] American Chemical Society.\""],"dc:subject":["semiconductor nanowire","selective lateral epitaxy","selective area epitaxy","sMIM","IR-sSNOM"],"dc:title":["Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:24:47Z"}