Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition

Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2010

Author dc:creator

• Dowdy, Ryan S.

Contributors dc:contributor

• Li, Xiuling

• nanowire
• Vapor-liquid-solid (VLS)
• III-V
• quantum dot
• gaas
• offcut
• suspended
• zinc
• Indium Arsenide (InAs)
• nanostructure
• movpe
• mocvd

Statement dc:rights

• Copyright 2009 Ryan S. Dowdy

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/14672

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/14672