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Showing 1 to 20 of 24 for “"movpe"”.
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MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths
… grown by metal-organic vapour phase epitaxy (MOVPE), it has been shown as extremely challenging to achieve ∼ 1.3µm emission in InGaAs metamorphic quantum well (QW) lasers (on GaAs substrate), due to a variety of strong, growth related issues, fundamentally linked to the overall epilayer …
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InN/GaN n-p struktūrų auginimas MOVPE būdu ir tyrimai /
Growth of InN/GaN N-P Structures by MOVPE and Research.
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Growth, processing and chracterization of gallium nitride based coaxial LEDs grown by MOVPE
… and nanowall metal organic vapor phase epitaxy (MOVPE) growth process has enhanced the possibility of these LEDs going into production from laboratory. Previous work has shown that these nanowires exhibited an intense photoluminescence (PL), in spite of their large surface-area to volume ratio, …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in order to replace the conventional …
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Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas
… fase vapor mediante precursores metalorgánicos (MOVPE) para el crecimiento de células solares de semiconductores III-V para concentraciones luminosas elevadas. En la primera parte de la memoria se presentan los principios de la MOVPE y el estudio de los materiales semiconductores utilizados a lo …
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Growth and characterization of epitaxial gallium oxide films
… thesis is to develop the growth processes of MOVPE-grown (100) β-Ga2O3 films to fulfill the requirements of vertical devices. An in-depth study has been performed to develop the process of growing µm-level thick films with excellent electrical properties in terms of wide doping range and high …
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STUDY OF WURTZITE AND ZINCBLENDE GAN BASED GREEN LED HETEROSTRUCTURE
… were grown at relatively high temperatures in MOVPE. In this thesis, more QW fluctuations were found as a result of using higher QW growth temperatures for green emitting material. QW fluctuations tended to localise the carriers away from defects, suppressing non-radiative recombination rate …
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Multiscale models of the metalorganic vapor phase epitaxy process
… specifically metalorganic vapor phase epitaxy (MOVPE). The difficulty in creating an overall modeling strategy for the MOVPE process is that important processes occur on a wide range of length and time scales. Gas phase heat and mass transfer affect the flux of species to the surface, while …
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Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).
… grown by metal-organic vapour phase epitaxy (MOVPE), and of the final concentrator solar cell devices. A special emphasis is put on the optimization of the solar cell concentration response, as the most important distinctive characteristic when compared to other GaInP/GaAs dual-junction solar …
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Aspectos estructurales, deformación y superficies en relación con la fiabilidad de transistores de alta movilidad electrónica basados en heteroestructuras de AlGaN/GaN
… de crecimiento epitaxial similares (MBE y MOVPE). El conocimiento de la heteroestructura es fundamental para realizar simulaciones de los principales parámetros y propiedades de interés como los campos de polarización, la densidad de carga en el canal y los mecanismos de dispersión, que …
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Surface dynamics in III-V epitaxy and its device implications
Metalorganic vapour phase epitaxy (MOVPE) is a well-established, industry-compatible, compound semiconductor crystal growth technique, allowing for efficient and controllable material deposition. A wide range of semiconductor devices, both from III-V and nitrides families, are commonly fabricated …
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Spin and Carrier Relaxation Dynamics in InAsP Ternary Alloys, the Spin-orbit-split Hole Bands in Ferromagnetic InMnSb and InMnAs, and Reflectrometry Measurements of Valent Doped Barium Titanate
… grown using Metalorganic Vapor phase Epitaxy (MOVPE) have textit{$T_c$} textgreater 300 K. Magnetic circular dichroism was performed on MOVPE grown InMnAs and InMnSb. Comparison of the experimental results with the theoretical calculations provides a direct method to map the band structure, …
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Entwicklung von optisch pumpbaren UVC-Lasern auf AlGaN-Basis
… sich Silizium aus den SiC-Beschichtungen des MOVPE-Reaktors in die nominell undotierten Schichten einbaut und dass dies durch die Wahl geeigneter Wachstumsbedingungen oder durch die Verwendung von TaC-Beschichtungen deutlich verringert werden kann. Auch eine Erhöhung der …
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Compact Femtosecond Lasers for Multiphoton Imaging
… saturable absorber structure grown using MOVPE and processed via lateral etching is realized. This membrane saturable absorber was used to mode-lock a 1µm VECSEL for the first time.
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Site-controlled quantum dots as sources of quantum light
… methods and metalorganic vapor-phase epitaxy (MOVPE), make this source one of the few scalable systems which have been proven in recent years to emit photons with very interesting properties, polarization-entangled photons, for instance, upon optical excitation. In this work, all the main …
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Single-photon avalanche photodiodes for quantum communication applications in the near-infrared
… location on both a wafer-scale and cell-scale on MOVPE-grown wafers of SPADs, and the impact on the experimental characteristics that are used to quantify performance, primarily the DC characteristics breakdown voltage and dark current. Two wafers were measured, with both resulting in higher dark …
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Compound Semiconductor Material Manufacture, Process Improvement
… Arsenide or Indium Phosphide [III/V]. For MOVPE to compete in large-scale markets, the manufacturing process requires transformation into a reliable, repeatable production process. This need is identified within the process scrap percentage of the process when benchmarked against the more …
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Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares
… capas de GaN sobre zafiro crecidas por MOVPE como substratos (definidos como pseudosubtratos). Una de las principales dificultades encontradas en la optimización del crecimiento ha sido la reproducibilidad de las condiciones de crecimiento ya que la ventana óptima de temperaturas es muy …
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Nanoscale electrical characterisation of nitride structures
… in the quality of epitaxial GaN grown by MOVPE have been facilitated by understanding the formation of defects within the materials and structures. However, hillocks as a specific type of defects have not been intensively studied yet. In this work, three types of hillocks were discovered …
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