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Showing 1 to 20 of 33 for “"movpe"”.
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MOVPE growth and characterization of Cr-doped GaN
… GaN growth by metal organic vapor phase epitaxy (MOVPE) was studied for the first time with the intention of producing a dilute magnetic semiconductor (DMS) with room temperature ferromagnetism. To this end the following growth parameters were investigated and optimized: carrier gas, precursor …
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MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths
… grown by metal-organic vapour phase epitaxy (MOVPE), it has been shown as extremely challenging to achieve ∼ 1.3µm emission in InGaAs metamorphic quantum well (QW) lasers (on GaAs substrate), due to a variety of strong, growth related issues, fundamentally linked to the overall epilayer …
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MOVPE and characterization of GaN-based structures on alternative substrates
III-V-compound semiconductors based on the AlInGaN material system offer high chemical and thermal stability and bandgaps between 0.8 eV and 6.2 eV. They are suited for high frequency and high power devices as well as for light emitting diodes, which currently cover the ultra violet to green …
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InN/GaN n-p struktūrų auginimas MOVPE būdu ir tyrimai /
Growth of InN/GaN N-P Structures by MOVPE and Research.
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Growth, processing and chracterization of gallium nitride based coaxial LEDs grown by MOVPE
… and nanowall metal organic vapor phase epitaxy (MOVPE) growth process has enhanced the possibility of these LEDs going into production from laboratory. Previous work has shown that these nanowires exhibited an intense photoluminescence (PL), in spite of their large surface-area to volume ratio, …
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MOVPE growth and characterization of Al Kappa Ga 1 - Kappa N/GaN heterostructures for HEMT application
In this thesis the MOVPE growth of AlN, GaN and AlGaN/GaN heterostructures on sapphire substrates was investigated with respect to HEMT application. The prerequisites for excellent HEMT devices were defined with respect to their structural properties: the HEMT structure should consist of a highly …
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MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications
… using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in order to replace the conventional …
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Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas
… fase vapor mediante precursores metalorgánicos (MOVPE) para el crecimiento de células solares de semiconductores III-V para concentraciones luminosas elevadas. En la primera parte de la memoria se presentan los principios de la MOVPE y el estudio de los materiales semiconductores utilizados a lo …
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Growth and characterization of epitaxial gallium oxide films
… thesis is to develop the growth processes of MOVPE-grown (100) β-Ga2O3 films to fulfill the requirements of vertical devices. An in-depth study has been performed to develop the process of growing µm-level thick films with excellent electrical properties in terms of wide doping range and high …
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STUDY OF WURTZITE AND ZINCBLENDE GAN BASED GREEN LED HETEROSTRUCTURE
… were grown at relatively high temperatures in MOVPE. In this thesis, more QW fluctuations were found as a result of using higher QW growth temperatures for green emitting material. QW fluctuations tended to localise the carriers away from defects, suppressing non-radiative recombination rate …
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Multiscale models of the metalorganic vapor phase epitaxy process
… specifically metalorganic vapor phase epitaxy (MOVPE). The difficulty in creating an overall modeling strategy for the MOVPE process is that important processes occur on a wide range of length and time scales. Gas phase heat and mass transfer affect the flux of species to the surface, while …
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Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).
… grown by metal-organic vapour phase epitaxy (MOVPE), and of the final concentrator solar cell devices. A special emphasis is put on the optimization of the solar cell concentration response, as the most important distinctive characteristic when compared to other GaInP/GaAs dual-junction solar …
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Aspectos estructurales, deformación y superficies en relación con la fiabilidad de transistores de alta movilidad electrónica basados en heteroestructuras de AlGaN/GaN
… de crecimiento epitaxial similares (MBE y MOVPE). El conocimiento de la heteroestructura es fundamental para realizar simulaciones de los principales parámetros y propiedades de interés como los campos de polarización, la densidad de carga en el canal y los mecanismos de dispersión, que …
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Surface dynamics in III-V epitaxy and its device implications
Metalorganic vapour phase epitaxy (MOVPE) is a well-established, industry-compatible, compound semiconductor crystal growth technique, allowing for efficient and controllable material deposition. A wide range of semiconductor devices, both from III-V and nitrides families, are commonly fabricated …
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Spin and Carrier Relaxation Dynamics in InAsP Ternary Alloys, the Spin-orbit-split Hole Bands in Ferromagnetic InMnSb and InMnAs, and Reflectrometry Measurements of Valent Doped Barium Titanate
… grown using Metalorganic Vapor phase Epitaxy (MOVPE) have textit{$T_c$} textgreater 300 K. Magnetic circular dichroism was performed on MOVPE grown InMnAs and InMnSb. Comparison of the experimental results with the theoretical calculations provides a direct method to map the band structure, …
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