Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"offcut"”.
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High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization
… between 650Ê»C and 900Ê»C on (001)-, (001) offcut 6Ê» towards an in-plane <110>-, and (001) offcut 6Ê» towards an in-plane <100>-oriented Si substrates. The evolution of field threading dislocation density (TDD) with growth temperature in the on-axis samples indicates that dislocation …
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Lattice mismatched compound semiconductors and devices on silicon
… of III-V zinc-blende structures. By using a 60 offcut substrate (Ge on insulator) which favors a double-step surface reconstruction upon annealing, antiphase disorders were suppressed and single-domain GaAs on Si was demonstrated. The lattice was then graded from GaAs to InP by compositionally …
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Using simulation to predict performance of salmon portioning line
… affects the efficiency of the system to put the offcut of the fillet into better use. The model is constructed in Simul8 using data from the manufacturer of the system and few days’ production of salmon. The results shows that the size of the salmon has a big impact on the production and …
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Integration of III-V optical devices and interconnects on Si using SiGe virtual substrates
… dislocation density lower than 3x 106 cm'2 on offcut SiGe virtual substrates has been demonstrated. While utilizing SiGe virtual substrate technology to enable high quality GaAs on Si, we have studied the crack formation in GaAs layers on SiGe resulting from the thermal mismatch between the …
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Medium Resolution
… to accommodate the found, the unwanted, the offcut and the wasted. This produces a new relevance for an architecture of underprocessed and irregular materials. In order to adapt to material irregularities architects have adopted various 3D scanning techniques to produce digital …
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III-V compositionally graded buffers for heterostructure integration
… also used the direct growth of Ge on Si offcut substrates. InAsxP₁-x compositionally graded buffers were investigated for the growth of InyGa₁-yAs compositions with lattice constants greater than InP. We report the effects of strain gradient, growth temperature, and strain initiation …
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Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of …