Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 752 for “"gaas"”.
-
Aligned GaAs pillar bonding
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
-
Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor
Designs for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the …
-
Development of GaAs pixel detectors
… of particle detectors made of semiinsulating GaAs are explained. For the hybrid GaAs pixel detectors the bump-bonding of the sensors to the electronics had to be developed. The principle of this technology and its optimization is described in chapter 4. In order to investigate the influence of …
-
Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren
… wurde die Zuverlässigkeit von Hochfrequenz-GaAs-Heteroübergang-Bipolartransistoren (HBTs), die am Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) für Anwendungen mit hohen Zuverlässigkeitsanforderungen (Mobilfunk, Weltraum) hergestellt wurden, untersucht. Die …
-
Elektrische Spininjektion in GaAs LEDs
… Detektor der Elektronenpolarisation wurde eine GaAs/(Al, Ga)As Leuchtdiode (Spin-LED) verwendet, in die über das p-dotierte Substrat unpolarisierte Löcher und über den n-dotierten semimagnetischen Halbleiter spinpolarisierte Elektronen injiziert wurden. Das durch die Rekombination der …
-
Piezoelectric effects in GaAs MESFET's
… shown to cause electrical performance shifts in GaAs MESFET structures due to the piezoelectric nature of the gallium arsenide lattice. This work develops a framework of mathematical models and experimental techniques by which the intrinsic stresses in the film and the GaAs substrate can be …
-
Position sensitive detectors in GaAs
… with examples of detector descriptions for the GaAs Forward Semiconductor Tracker. Results from a generator level study of b-jets from the process Hbb and predictions of influences in the Forward Tracker are also given.
-
High-quality InP on GaAs
… for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, more expensive, and utilize older fabrication equipment than GaAs. High-quality InP on GaAs may also serve as a step towards bringing high-quality InP onto the Si platform. Integrating …
-
2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures
The MBE growth of high-quality GaAs/AlGaAs epilayer structures has enabled the study of novel physical phenomena, such as the Quantum Hall and Fractional Quantum Hall in a 2D electron system (2DES), 1D transport, and single-electron transport in 0D systems. The wide range of systems that can be …
-
Passivation of GaAs surfaces and fabrication of self-assembled In(Ga)As/GaAs quantum ring structures
This work concentrates on two topics: (i) GaAs surface passivation methods using different materials and (ii) formation of InAs islands on GaAs and transformation of InAs islands into quantum rings (QRs). All the samples are fabricated by metalorganic vapor phase epitaxy and characterized by …
-
Beitrag zur Prozeßchemie der GaAs-Einkristallsynthese
Beside Silicon Gallium Arsenide (GaAs) is the most important semiconductor. The high potential of this material is connected with the fast development of optoelectronic devices in our days. For future applications an increased scientific understanding of the growth of GaAs single crystal is …
-
Interfacial Structures of Oxides on GaAs
For the deposited oxide/GaAs work, only deposition of (Ga,Gd)$\sb2$O$\sb3$ oxide among others shows a low interface trap density (D$\rm\sb{it})$ at the oxide-GaAs interface. It is low enough to warrant the demonstration of both n- and p-channel enhancement GaAs MOSFETs. High-resolution transmission …
-
Linearity of power AlGaAs/GaAs HBTs
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
Page 1 of 38