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Showing 1 to 20 of 412 for “"III-V"”.
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III-V Bismide Optoelectronic Devices
… beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I …
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Efecto de la incorporación de antimonio sobre la nanoestructura de puntos cuánticos III-V/III-V
… antimonio en nanoestructuras de semiconductores III-V supone una mejora en los valores de intensidad fotoluminiscente. Esto se debe al cambio en la estructura de bandas que produce la introducción de este elemento motivado, principalmente, por los cambios de composición del sistema. En la …
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Optical properties of III-V semiconductors
A GaAs-Al$\sb{0.22}$Ga$\sb{0.78}$As heterostructure was prepared and used as a multimode optical waveguide in order to measure the sub bandgap energy- and temperature-dependent refractive index of GaAs. Propagation constants for the individual modes were measured by exciting one mode at a time …
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Antimonide-based III-V multigate transistors
… Si in future generations of nanoelectronics. III-V compound semiconductors, such as InGaAs and InGaSb are promising candidates as channel materials for MOSFETs as a result of their extraordinary transport properties. In the past few years, rapid growth in the research of InGaAs n-channel …
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Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern
Ferromagnetische III-V-Halbleiter wurden mittels des magnetooptischen Kerr-Effekts (MOKE) und des magnetischen Zirkulardichroismus (MCD) untersucht. Die gemessenen Signalhöhen sind proportional zur Magnetisierung. Damit war es möglich, Hystereseschleifen aufzuzeichnen. Obwohl zu erwarten wäre, dass …
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Dispersive phonon imaging in III-V semiconductors
"Low-temperature transport properties of high-frequency acoustic phonons are investigated in GaAs, InSb, InP and InAs using the phonon-imaging technique. In this method, a focused laser beam provides a movable heat source on one side of a cooled crystal (~ 2 K). A single small phonon detector on …
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Scanning tunneling microscopy of III-V semiconductors
Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the c(8x2) reconstruction and shows that the c(8x2) consists of ordered (4x2) …
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Characterization of novel III-V semiconductor devices
This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, …
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Ultra-scaled III-V Vertical Tunneling Transistors
… capability. We focus on the most promising group III-V semiconductor heterojunction structure, the broken-band GaSb/InAsSb system, in a vertical nanowire (VNW) TFET configuration. We first develop a new technology for ultra-scaled GaSb/InAsSb VNW fabrication, reaching a diameter as small as 5 nm. …
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Nonlinear Optics in III-V Quaternary Semiconductor Waveguides
… by a single material platform yet. Several III-V semiconductors, such as AlGaAs, have demonstrated potentials for photonic integration; nevertheless, there is still lack of data in literature on nonlinear optical properties of these materials. In this thesis, we extend the quest to evaluate …
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Growth of III-V semiconductor lasers on silicon
The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabrication of an opto-electronic integrated circuit, but reliable III-V semiconductor lasers grown on Si have yet to be reported. Many problems not encountered when growing III-V lasers on III-V …
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Nano-scale ohmic contacts for III-V MOSFETs
… into the sub-10 nm regime. Among them, certain III-V compound semiconductors have emerged as the most promising candidates to replace silicon in future generations of CMOS. In particular and as a result of their extraordinary electron or hole transport properties, InGaAs, InAs, and InGaSb enable …
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III-V waveguides and couplers for integrated optics
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1987
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Growth and characterization of III-V compound semiconductors
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Quantum capacitance in scaled down III-V FETs
… significance. Among the various candidates, III-V-based MOSFETs represent a very promising technology. In particular, low-effective mass materials with high electron velocities, such as InGaAs and InAs are of great interest. A concern with this approach is the relatively small inversion-layer …
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III-V compositionally graded buffers for heterostructure integration
InyGa₁-yAs alloys are critical in commercial applications such as high speed transistors, light emitting diodes, solid state lasers, photovoltaics, and photo-detectors. However, the range of compositions used in these applications is often limited to the range of InyGa₁-yAs compositions which are …
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In Situ Surface Studies of III-V Semiconductor Compounds
… system, during imaging. The inclusion of group III elements in the evaporation flux proves unequivocally that III-V Molecular Beam Scanning Tunnelling Microscopy (MBSTM) is a realisable investigatory technique. Simultaneous deposition of In and As whilst imaging allowed dynamic observation of …
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III-V optoelectronic devices in the BGaInAs material system
… we investigate the potential of direct-bandgap, III-V materials for lattice-matched absorbers and emitters on silicon. Leveraging the small lattice constant of the boron pnictides, BGaInAs can be grown lattice-matched or nearly lattice-matched to Si; however, the difficult growth mechanics of …
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MOCVD growth and doping studies of III/V semiconductors
Contains fulltext : mmubn000001_160060796.pdf (Publisher’s version ) (Open Access)
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