An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits

Intense material and device research aimed toward high-speed digital circuits and optoelectronic integrated circuits (OEICs) has focused on III-V compound semiconductors such as GaAs-based and InP-based materials because of their superior electronic properties over those of silicon. Recent advances in the fields of Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), as well as device and circuit fabrication have made large-scale integration (LSI) using III-V compound semiconductor devices possible. This thesis describes an enhancement/depletion (E/D) process that utilizes modulation-doped field-effect transistors (MODFETs) and direct-coupled FET logic (DCFL) technology. The potential of this process for high-speed, high-density applications for LSI digital integrated circuits as well as optoelectronic circuits is demonstrated through the fabrication of the DCFL ring oscillators and the OEIC transimpedance receivers.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Tong, Minh Ho

Contributors dc:contributor

• Adesida, Ilesanmi

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1992 Tong, Minh Ho

Language dc:language

eng

Identifier

(UMI)AAI9305714
AAI9305714

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20289