Carbon doping of compound semiconductor epitaxial layers grown by metalorganic chemical vapor deposition using carbon tetrachloride

A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl$\sb4$ doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl$\sb4$ doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl$\sb4$ flow rate. Although CCl$\sb4$ is an effective p-type dopant for MOCVD $\rm Al\sb{x}Ga\sb{1-x}As$, injection of CCl$\sb4$ into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Cunningham, Brian Thomas

Contributors dc:contributor

• Stillman, Gregory E.

• Chemistry, Organic
• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1990 Cunningham, Brian Thomas

Language dc:language

eng

Identifier

AAI9026165
(UMI)AAI9026165

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20011