Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition

III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the characterization of epilayer structures grown by the MOCVD technique. High resolution electron microscopy (HREM), the two beam technique and the convergent beam technique (CBED) were used. Cross sectional, plan view and cleavage samples using the ion milling or chemical etching method were used for TEM sample preparation. Tetragonal distortion occurs in the strained layer superlattice (SLS). Misfit dislocations are found above a certain layer thickness (critical thickness) and the critical thickness is related to the total strain state in SLS. Composition measurements of In$\sb{\rm 1-x}$Ga$\sb{\rm x}$As in SLS using TEM has restrictions because of the misfit strain and the similarity of atomic scattering factors of Ga and In. But a low In concentration layer can be determined from the (002) dark field intensity ratio. The interface quality of heterostructures can be distinguished by 5 beam, 9 beam or more conditions at a (100) zone axis. Digital vector pattern recognition was found to be a powerful tool for quantization of interface quality.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Engineering, Materials Science

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Kim, Jongryoul

Contributors dc:contributor

• Wayman, C. Marvin

• Engineering, Materials Science

Statement dc:rights

• Copyright 1991 Kim, Jongryoul

Language dc:language

eng

Identifier

AAI9210864
(UMI)AAI9210864

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23767