Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials

A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher purity than previously reported has been grown by diffusion pumped molecular beam epitaxy. The purity of GaAs grown by this method increases directly from increased pumping. The system has also been used for growth of GaAs by gas-source molecular beam epitaxy and chemical beam epitaxy and the effects of a number of growth parameters on background carrier concentration are reported.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• McCollum, Mark John

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1990 McCollum, Mark John

Language dc:language

eng

Identifier

AAI9026265
(UMI)AAI9026265

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20075