{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20075"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20075","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials","abstract":"A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher purity than previously reported has been grown by diffusion pumped molecular beam epitaxy. The purity of GaAs grown by this method increases directly from increased pumping. The system has also been used for growth of GaAs by gas-source molecular beam epitaxy and chemical beam epitaxy and the effects of a number of growth parameters on background carrier concentration are reported.","abstract_html":"A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher purity than previously reported has been grown by diffusion pumped molecular beam epitaxy. The purity of GaAs grown by this method increases directly from increased pumping. The system has also been used for growth of GaAs by gas-source molecular beam epitaxy and chemical beam epitaxy and the effects of a number of growth parameters on background carrier concentration are reported.","abstract_has_math":false,"creators":["McCollum, Mark John"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:28:02Z","date_published":"2011-05-07T12:28:02Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1990 McCollum, Mark John"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9026265","(UMI)AAI9026265"],"render_values":[{"text":"AAI9026265","href":null,"code":true},{"text":"(UMI)AAI9026265","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20075","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["McCollum, Mark John"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:28:02Z","10000-01-01","1990"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1990 McCollum, Mark John"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9026265","(UMI)AAI9026265","http://hdl.handle.net/2142/20075"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher purity than previously reported has been grown by diffusion pumped molecular beam epitaxy. The purity of GaAs grown by this method increases directly from increased pumping. The system has also been used for growth of GaAs by gas-source molecular beam epitaxy and chemical beam epitaxy and the effects of a number of growth parameters on background carrier concentration are reported.","High quality InGaP has been grown by gas-source molecular beam epitaxy. The differential thermal expansion coefficient of InGaP on GaAs has been determined directly from variable temperature x-ray measurements. InGaP has also been grown by chemical beam epitaxy. Although the quality of the layers is inferior to those grown by gas-source molecular beam epitaxy, the work presented here is one of the first reports of InGaP grown by chemical beam epitaxy.","The results of these investigations are presented and the problems and advantages of the system are discussed.","Made available in DSpace on 2011-05-07T12:28:02Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9026265.pdf: 3824468 bytes, checksum: a76f7161333ebe8817f239ca7600995a (MD5) Previous issue date: 1990","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:41:23Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:54-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Chemical beam, gas-source molecular beam, and molecular beam epitaxial growth of III/V compound semiconductor materials"]}]}],"canonical_facts":{"dc:contributor":["Stillman, Gregory E."],"dc:creator":["McCollum, Mark John"],"dc:date":["2011-05-07T12:28:02Z","10000-01-01","1990"],"dc:description":["A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher purity than previously reported has been grown by diffusion pumped molecular beam epitaxy. The purity of GaAs grown by this method increases directly from increased pumping. The system has also been used for growth of GaAs by gas-source molecular beam epitaxy and chemical beam epitaxy and the effects of a number of growth parameters on background carrier concentration are reported.","High quality InGaP has been grown by gas-source molecular beam epitaxy. The differential thermal expansion coefficient of InGaP on GaAs has been determined directly from variable temperature x-ray measurements. InGaP has also been grown by chemical beam epitaxy. Although the quality of the layers is inferior to those grown by gas-source molecular beam epitaxy, the work presented here is one of the first reports of InGaP grown by chemical beam epitaxy.","The results of these investigations are presented and the problems and advantages of the system are discussed.","Made available in DSpace on 2011-05-07T12:28:02Z (GMT). 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