III-V compound semiconductor selective area epitaxy on silicon substrates

In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems given the high electron mobility that the III-V semiconductors have. Higher electron transport properties than silicon enable the electronic devices made of III-V materials to perform at higher switching speed. The integration of III-V semiconductor devices on silicon is the most approachable way that utilizes both the mature manufacturing technology of silicon CMOS circuits and the good electronic properties of III-V material. In optoelectronics, silicon is not a good material to make light sources because of its indirect bandgap. The potential high bandwidth and high speed data transmission in VLSI optical interconnects drive the need for optical device integration in silicon circuits. Monolithic III-V on silicon substrate optoelectronic devices are a promising direction to achieve optical data transmission on chip. Selective area epitaxy is an MOCVD/MBE growth method that deposits high quality epitaxial materials on selected substrate surface areas. The selectivity is achieved by using SiO2 or Si3N4 as a growth mask, so that epitaxial growth only happens on exposed substrate surface. The dislocation density reduction and bottom-up fabrication advantages of selective area epitaxy make it a widely used approach in III-V on silicon integration. This thesis introduces the motivation, growth methods, issues, and applications of III-V semiconductor selective area epitaxy on silicon substrate.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Lu, Yun

Contributors dc:contributor

• Coleman, James J.

• selective area epitaxy
• III-V material
• silicon substrate
• monolithic device
• Metal organic chemical vapor deposition (MOCVD)
• Molecular beam epitaxy (MBE)

Statement dc:rights

• Copyright 2014 Yun Lu

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/49642

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/49642