Characterization of reactive ion etching of III-V compound semiconductor materials

Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period gratings with smooth etched surfaces and excellent stoichiometry in these compounds. Highly anisotropic structures with dimensions down to 300 A at a pitch of 600 A are demonstrated in InP. A selective RIE process for InGaAs on InAlAs in a CH$\sb4$:H$\sb2$ plasma has been developed and utilized to fabricate 0.26 μm T-gate modulation doped field-effect transistors (MODFETs). The microwave measurements of reactive-ion-etched and wet-etched devices show identical performance.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Andideh, Ebrahim

Contributors dc:contributor

• Adesida, Ilesanmi

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism

Statement dc:rights

• Copyright 1990 Andideh, Ebrahim

Language dc:language

eng

Identifier

AAI9026122
(UMI)AAI9026122

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19844