Technische Universität Dresden
Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs
Abstract
dc:description.abstractThis work summarizes properties of nitrogen containing GaAs, which are relevant for optoelectronic application and allow a deeper insight in the physics of this material. In the first part the dependence of the banggap energy of nitrogen implanted GaAs on several process parameters (implanted nitrogen concentration, implantation temperature, annealing duration and temperature) is investigated. The second part focuses on the relaxation dynamics of highly excited carriers. For this, the carrier relaxation dynamics in nitrogen implanted GaAs, in epitaxially grown GaAsN and in (pure) GaAs are investigated by means of pump probe measurements on a femtosecond time scale. The comparision of experimental results to calculated scattering rates leads to relevant informations of scattering mechanisms and electronic properties.
Degree
thesis:*- Level thesis:degree_level
- thesis.doctoral
- Grantor dc:publisher
- Technische Universität Dresden
- Year
- 2006
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Sinning, Steffen
- Contributors dc:contributor
-
- Helm, Manfred
- Leo, Karl
- Dekorsy, Thomas