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Showing 1 to 20 of 717 for “"GaAs"”.
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Aligned GaAs pillar bonding
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor
Designs for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the …
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Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren
… wurde die Zuverlässigkeit von Hochfrequenz-GaAs-Heteroübergang-Bipolartransistoren (HBTs), die am Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) für Anwendungen mit hohen Zuverlässigkeitsanforderungen (Mobilfunk, Weltraum) hergestellt wurden, untersucht. Die …
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Elektrische Spininjektion in GaAs LEDs
… Detektor der Elektronenpolarisation wurde eine GaAs/(Al, Ga)As Leuchtdiode (Spin-LED) verwendet, in die über das p-dotierte Substrat unpolarisierte Löcher und über den n-dotierten semimagnetischen Halbleiter spinpolarisierte Elektronen injiziert wurden. Das durch die Rekombination der …
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Piezoelectric effects in GaAs MESFET's
… shown to cause electrical performance shifts in GaAs MESFET structures due to the piezoelectric nature of the gallium arsenide lattice. This work develops a framework of mathematical models and experimental techniques by which the intrinsic stresses in the film and the GaAs substrate can be …
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Position sensitive detectors in GaAs
… with examples of detector descriptions for the GaAs Forward Semiconductor Tracker. Results from a generator level study of b-jets from the process Hbb and predictions of influences in the Forward Tracker are also given.
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High-quality InP on GaAs
… for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, more expensive, and utilize older fabrication equipment than GaAs. High-quality InP on GaAs may also serve as a step towards bringing high-quality InP onto the Si platform. Integrating …
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2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures
The MBE growth of high-quality GaAs/AlGaAs epilayer structures has enabled the study of novel physical phenomena, such as the Quantum Hall and Fractional Quantum Hall in a 2D electron system (2DES), 1D transport, and single-electron transport in 0D systems. The wide range of systems that can be …
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Interfacial Structures of Oxides on GaAs
For the deposited oxide/GaAs work, only deposition of (Ga,Gd)$\sb2$O$\sb3$ oxide among others shows a low interface trap density (D$\rm\sb{it})$ at the oxide-GaAs interface. It is low enough to warrant the demonstration of both n- and p-channel enhancement GaAs MOSFETs. High-resolution transmission …
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Linearity of power AlGaAs/GaAs HBTs
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Ultra-thin GaAs Photovoltaics for Space Applications
… A new type of ultra-thin single-junction GaAs solar cell was designed using drift-diffusion simulations with an 80 nm absorber layer thickness and optimised passivation layers. In particular, the use of InGaP as the front surface passivation layer, instead of the more widely used AlGaAs, …
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Thermoelectric properties of mesoscopic systems in GaAs
… of mesoscopic structures in modulation doped GaAs/ Al0.33Ga0.67As heterostructures. In particular, we study the thermopower of two-dimensional mesoscopic systems (2DMSs) and antidot lattices defined in them. Quantum oscillations in the thermopower (TP) of a quantum point contact allow accurate …
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GaAs/AlGaAs mid-infrared quantum cascade laser
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Electrical reliability of RF power GaAs PHEMTs
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.
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GaAs/AlGaAs far-infrared quantum cascade laser
… subband farinfrared (40-100[mu]m) laser, using GaAs/ AlxGal-xAs heterostructures. The proposed design aims to use LO-phonon-mediated depopulation of the lower THz laser level to aid the intersubband laser population inversion. Interband recombination occurs by means of stimulated emission, thus …
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