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Showing 1 to 9 of 9 for “"GaAsN"”.
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Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs
… in nitrogen implanted GaAs, in epitaxially grown GaAsN and in (pure) GaAs are investigated by means of pump probe measurements on a femtosecond time scale. The comparision of experimental results to calculated scattering rates leads to relevant informations of scattering mechanisms and electronic …
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Desarrollo de detectores de infrarrojo fotovoltaicos, de pozo cuántico y doble barrera, para la banda de 3-5 um
… (con la excepción de los detectores con (In)GaAsN en el pozo), tienen la estructura AlGaAs/AlAs/GaAs. El trabajo desarrollado en esta tesis incluye no sólo el desarrollo y caracterización de los detectores DBQW, sino también el diseño de las estructuras, así como el crecimiento de los …
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Dilute Nitride Quantum Engineered Solar Cells: For Next Generation of Multispectral Ultra-High Efficiency Si and III-V Photovoltaics
… nitride layers is proposed. Similarly, MBE grown GaAsN/GaAs MQWs solar cell device design has been adopted to lower the thermalization loss which enables a significant sub-GaAs-bandgap photocurrent generation while maintaining a world record-setting open-circuit voltage (Voc) approaching the ideal …
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Characterization of novel sb-nanostructures by transmission electron microscopy techniques for high efficient solar cells
… type-I (GaAsSbN/GaAs) and type-II (GaAsSb/GaAsN) SL structures were evaluated in terms of compositional homogeneity and uniformity. A new methodology for determining N distribution is proposed based in the suitable normalization and separation of intensity ratios by using different angle …
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Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)
… technique, based on the MBE growth of GaAsN on misoriented GaAs (111)B substrates, has been developed. The control of the pattern generated (holes size and density) is possible by means of the growth parameters. Also, the chance of growing InAs quantum dots on patterned surfaces of GaAs …
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Transmission electron microscopy analysis of novel iii-v nanostructures with sb and bi for optoelectronic applications
… of improving the interface quality of GaAsSb/GaAsN type II superlattices, which are promising for multi-junction solar cells, by implementing different growth strategies. In such superlattices, the challenge lies in the segregation of Sb during growth, which alters the expected compositional …
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Desarrollo de técnicas de caracterización para materiales de banda intermedia : Development of characterization techniques for intermediate band materials
… mediante nano-estructuras y el sistema GaAsN (propuesto por el grupo del profesor W. Walukiewicz del LBNL) para la aproximación mediante aleaciones. El Capítulo III presenta las técnicas de caracterización desarrolladas y empleadas para la caracterización de materiales IB. Especial …