{"id":{"repo_id":"qucosa-diss","oai_identifier":"oai:qucosa:de:qucosa:23860"},"canonical_url":"https://search.dev.ndltd.org/etd/qucosa-diss/oai:qucosa:de:qucosa:23860","repository":{"repo_id":"qucosa-diss","name":"QUCOSA","base_url":"http://www.qucosa.de/oai/"},"display":{"title":"Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs","abstract":"This work summarizes properties of nitrogen containing GaAs, which are relevant for optoelectronic application and allow a deeper insight in the physics of this material. In the first part the dependence of the banggap energy of nitrogen implanted GaAs on several process parameters (implanted nitrogen concentration, implantation temperature, annealing duration and temperature) is investigated. The second part focuses on the relaxation dynamics of highly excited carriers. For this, the carrier relaxation dynamics in nitrogen implanted GaAs, in epitaxially grown GaAsN and in (pure) GaAs are investigated by means of pump probe measurements on a femtosecond time scale. The comparision of experimental results to calculated scattering rates leads to relevant informations of scattering mechanisms and electronic properties.","abstract_html":"This work summarizes properties of nitrogen containing GaAs, which are relevant for optoelectronic application and allow a deeper insight in the physics of this material. In the first part the dependence of the banggap energy of nitrogen implanted GaAs on several process parameters (implanted nitrogen concentration, implantation temperature, annealing duration and temperature) is investigated. The second part focuses on the relaxation dynamics of highly excited carriers. For this, the carrier relaxation dynamics in nitrogen implanted GaAs, in epitaxially grown GaAsN and in (pure) GaAs are investigated by means of pump probe measurements on a femtosecond time scale. The comparision of experimental results to calculated scattering rates leads to relevant informations of scattering mechanisms and electronic properties.","abstract_has_math":false,"creators":["Sinning, Steffen"],"institution":"Technische Universität Dresden","degree_name":null,"degree_level":"thesis.doctoral","degree_discipline":null,"degree_department":null,"school":null,"contributors":["Helm, Manfred","Leo, Karl","Dekorsy, Thomas"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006-01-04","date_published":"2006-01-04","updated_at":"2026-07-24T03:56:55Z","subjects":["Abfrage","Anrege","Bandlücke","Femtosekunden","GaAs","GaAsN","GaNAs","Implantation","Ladungsträger","Reduktion","Relaxation","Spektroskopie","Stickstoff","epitaktisch","ultraschnell","band anticrossing","band gap","carrier relaxation","epitaxially","femtosecond","ion","nitrogen","photomodulated","pump probe","reduction","spectroscopy","ultrafast"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":null,"outbound_label":null,"outbound_source":null},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Helm, Manfred","Leo, Karl","Dekorsy, Thomas"]},{"key":"dc:creator","label":"Author","values":["Sinning, Steffen"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden","Technische Universität Dresden"]},{"key":"dc:type","label":"Dc Type","values":["doctoralThesis"]},{"key":"thesis:degree_level","label":"Degree Level","values":["thesis.doctoral"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Technische Universität Dresden"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Abfrage","Anrege","Bandlücke","Femtosekunden","GaAs","GaAsN","GaNAs","Implantation","Ladungsträger","Reduktion","Relaxation","Spektroskopie","Stickstoff","epitaktisch","ultraschnell","band anticrossing","band gap","carrier relaxation","epitaxially","femtosecond","ion","nitrogen","photomodulated","pump probe","reduction","spectroscopy","ultrafast"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This work summarizes properties of nitrogen containing GaAs, which are relevant for optoelectronic application and allow a deeper insight in the physics of this material. In the first part the dependence of the banggap energy of nitrogen implanted GaAs on several process parameters (implanted nitrogen concentration, implantation temperature, annealing duration and temperature) is investigated. The second part focuses on the relaxation dynamics of highly excited carriers. For this, the carrier relaxation dynamics in nitrogen implanted GaAs, in epitaxially grown GaAsN and in (pure) GaAs are investigated by means of pump probe measurements on a femtosecond time scale. The comparision of experimental results to calculated scattering rates leads to relevant informations of scattering mechanisms and electronic properties.","Diese Arbeit widmet sich Eigenschaften von Stickstoff-haltigem Gallium-Arsenid, die sowohl für das physikalische Verständnis als auch für optoelektronische Anwendungen dieses Materials relevant sind. Im ersten Teil dieser Arbeit wird die Abhängigkeit der Bandlücken-Energie von verschiedenen Prozess-Parametern (Stickstoffkonzentration, Implantationstemperatur, Ausheildauer und -temperatur) in Stickstoff-implantiertem GaAs untersucht. Der zweite Teil konzentriert sich auf die Relaxationsdynamik hoch angeregter Ladungsträger. Neben dem oben bereits angesprochenen Material wird in Anrege-Abfrage-Experimenten mit Femtosekunden-Zeitauflösung zusätzlich epitaktisch gewachsenes GaAsN und (Stickstoff-freies) GaAs untersucht. Die Berechnung der Streuraten und der Vergleich mit experimentell gewonnenen Daten liefert wesentliche Informationen über beteiligte Steumechanismen und elektronische Eigenschaften."]},{"key":"dc:title","label":"Title","values":["Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs"]}]}],"canonical_facts":{"dc:contributor":["Helm, Manfred","Leo, Karl","Dekorsy, Thomas"],"dc:creator":["Sinning, Steffen"],"dc:description.abstract":["This work summarizes properties of nitrogen containing GaAs, which are relevant for optoelectronic application and allow a deeper insight in the physics of this material. In the first part the dependence of the banggap energy of nitrogen implanted GaAs on several process parameters (implanted nitrogen concentration, implantation temperature, annealing duration and temperature) is investigated. The second part focuses on the relaxation dynamics of highly excited carriers. For this, the carrier relaxation dynamics in nitrogen implanted GaAs, in epitaxially grown GaAsN and in (pure) GaAs are investigated by means of pump probe measurements on a femtosecond time scale. The comparision of experimental results to calculated scattering rates leads to relevant informations of scattering mechanisms and electronic properties.","Diese Arbeit widmet sich Eigenschaften von Stickstoff-haltigem Gallium-Arsenid, die sowohl für das physikalische Verständnis als auch für optoelektronische Anwendungen dieses Materials relevant sind. Im ersten Teil dieser Arbeit wird die Abhängigkeit der Bandlücken-Energie von verschiedenen Prozess-Parametern (Stickstoffkonzentration, Implantationstemperatur, Ausheildauer und -temperatur) in Stickstoff-implantiertem GaAs untersucht. Der zweite Teil konzentriert sich auf die Relaxationsdynamik hoch angeregter Ladungsträger. Neben dem oben bereits angesprochenen Material wird in Anrege-Abfrage-Experimenten mit Femtosekunden-Zeitauflösung zusätzlich epitaktisch gewachsenes GaAsN und (Stickstoff-freies) GaAs untersucht. Die Berechnung der Streuraten und der Vergleich mit experimentell gewonnenen Daten liefert wesentliche Informationen über beteiligte Steumechanismen und elektronische Eigenschaften."],"dc:publisher":["Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden","Technische Universität Dresden"],"dc:subject":["Abfrage","Anrege","Bandlücke","Femtosekunden","GaAs","GaAsN","GaNAs","Implantation","Ladungsträger","Reduktion","Relaxation","Spektroskopie","Stickstoff","epitaktisch","ultraschnell","band anticrossing","band gap","carrier relaxation","epitaxially","femtosecond","ion","nitrogen","photomodulated","pump probe","reduction","spectroscopy","ultrafast"],"dc:title":["Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs"],"dc:type":["doctoralThesis"],"thesis:degree_level":["thesis.doctoral"],"thesis:institution_name":["Technische Universität Dresden"]},"updated_at":"2026-07-24T03:56:55Z"}