Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 97 for “"epitaxially"”.
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Angle-resolved photoemission spectroscopy studies of epitaxially-grown van der Waals ferromagnets
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2023-04-12 without embargo terms
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The formation of epitaxially stabilized nickel and cobalt silicides by pulsed laser annealing
The formation of epitaxially stabilised nickel and cobalt silicides by pulsed laser annealing has been investigated. Thermally grown NiSi and CoSi and Si<111> substrate were irradiated with laser pulses in the energy density range between 0.4 - 1.0 J/cm² in an attempt to produce epitaxially …
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Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells
… the strongest determinant of manufacturing cost. Epitaxially grown kerfless silicon has the potential to both significantly reduce silicon waste, and provide sufficient electrical quality to support high-efficiency photovoltaic modules because of its single-crystal structure and low structural …
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Development and application of saturable absorbers to femtosecond solid-state laser mode-locking
… These versatile devices can be grown both epitaxially with molecular beam epitaxy and non-epitaxially using RF sputtering. In this thesis, the development and application of both types of saturable absorbers to self-starting mode-locking in solid-state lasers was examined. The first part of …
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Angle resolved photoemission studies of silver bromide
… oriented polycrystalline AgBr and AgBri, and epitaxially grown AgBr on an Ag ( 111) single crystal. The experiments on the randomly oriented samples were concerned with obtaining the correct sample preparation methods--evaporation of AgBr or AgBri onto Ag which was evaporated onto an Au plated …
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Angle resolved photoemission studies of silver-bromide
… oriented polycrystalline AgBr and AgBrI, and epitaxially grown AgBr on an Ag (111) single crystal.
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Epitaxial growth of semiconductors and chiral metal surfaces using spin coating and electrodeposition
… the crystalline order. Second, a study on epitaxially electrodeposited chiral metal surfaces is presented, including Au films on Si(643) and Si(6̅4̅3̅), and Pt, Ni, Cu, and Ag films on top of Au. Enantioselective oxidation of L- and D-glucose on Ag/Au/Si(643) and Ag/Au/Si(6̅4̅3̅) confirms …
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Nanolithographically defined semiconductor quantum dots
… nement in quantum nanostructures fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch and overgrowth fabrication process. Devices are characterized by a current density-voltage (JV) test, electroluminescence (EL) and photoluminescence (PL) …
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Growth and characterization of ZnO and related nanostructures
… of ZnO growth on sapphire we have also grown epitaxially ordered zinc aluminate (ZnAlz04) with sub-micron dimensions on bare c-sapphire substrates. The epitaxially oriented deposit displays the form of characteristically twinned grains. The structure of these grains and their epitaxial …
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Material processing of quantum well infrared photodetectors
… well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP with particular electrical and …
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Surface magnetic order of ultra thin epitaxial vanadium films on silver
… ultra-thin (1-7 monolayers) films are deposited epitaxially on well-defined single crystalline Ag(100) substrate. The topmost layers of the films are studied by electron capture spectroscopy(ECS). ECS is a surface-sensitive technique for the investigation of magnetic order existing at surfaces. …
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Ultraschnelle optoelektronische und Materialeigenschaften von Stickstoff-haltigem GaAs
… dynamics in nitrogen implanted GaAs, in epitaxially grown GaAsN and in (pure) GaAs are investigated by means of pump probe measurements on a femtosecond time scale. The comparision of experimental results to calculated scattering rates leads to relevant informations of scattering …
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Ge and GeSi electroabsorption modulator arrays via strain and composition engineering
… device footprint, and low power consumption. Epitaxially grown GeSi films on SOI substrates are a suitable materials platform for integrated modulator applications. A modulator's operation wavelength adjustment and its system integration for broadband modulation are two major challenges of …
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Raman spectroscopy: from ferroelastic domain identification to strain tuning
… investigation of coupling phenomena induced by epitaxially, mechanically or piezoeletrically applied strain. Methods for quantitative determination of strain by Raman spectroscopy are proposed for some materials such as BiFeO3 or strained Si. Raman spectroscopy was also used for understanding …
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Electronic Quantum Transport in Graphene.
… and a wide range of applications. Graphene epitaxially grown on the Si-terminated surface of SiC is a good candidate to replace semiconductors in field-effect transistors. In this work we investigate the properties of epitaxial monolayer and bilayer graphene and develop a theoretical model …
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Modifying the magnetic properties of Laves phase intermetallic multilayers and films by nano-patterning and ion implantation
… different routes to nano-structuring in epitaxially grown rare earth – iron (REFe2) films and exchange spring materials are described. Namely i) electron beam lithography and Ar+ ion milling to define three-dimensional nano-scale structures, and ii) ion implantation to directly alter the …
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Optical characterization of compound semiconductors using photoconductivity and photoreflectance
… spectroscopy was used to characterize various epitaxially grown GaN samples via studying defects and imperfections present in the material. Distinct photoconductance features were observed near the GaN band edge, being attributed to sub-band imperfection levels.
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Apkonvertuojančių NaGdF4:Yb3+,Er3+ nanodalelių sintezė, paviršiaus modifikavimas branduolio-lukšto metodu ir tyrimas /
… Modification of NaGdF4:Yb3+,Er3+ particles by epitaxially growing a NaGdF4 shell on them yielded in greatly enhanced optical performance. Particles that underwent modification exhibit emission intensity magnified up to 25 times. Particles possesing above mentioned optical and size properties …
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Low-energy electron diffraction effects at complex interfaces
… 7X7:Cl surfaces was demonstrated. Graphene epitaxially grown on SiC(0001) surfaces was analyzed using Auger electron diffraction and Raman scattering spectroscopy. Finally, the roles of interfacial water and dissociative electron attachment resonances in low-energy electron-induced DNA …
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Scanning tunneling microscopy and spectroscopy of topological materials and heterostructures in thin films and devices
… and a 2D topological insulator WTe2, grown epitaxially, are studied with atomic resolution, and their physics is probed using in-situ back gating. The development of the back-gating process in a scanning tunneling microscope is one of the main results of this work and is reported in detail. …
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