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Showing 1 to 20 of 757 for “"Gallium"”.

  1. Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures

    Wu, Chih-HsyongUniversity of Illinois at Urbana-Champaign2011

    While Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\times$ 10$\sp{18}$ …

    uiuc Repository record

  2. Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays

    Beernink, Kevin JohnUniversity of Illinois at Urbana-Champaign2014

    Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, …

    uiuc Repository record

  3. Layer disordering and aluminum-gallium interchange in aluminum-gallium arsenide - gallium-arsenide quantum well heterostructures

    Guido, Louis JosephUniversity of Illinois at Urbana-Champaign2011

    In the experiments described here, Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs superlattice and quantum well heterostructure (QWH) crystals have been used as test vehicles to study Al-Ga interdiffusion. The data demonstrate that Al-Ga interchange is strongly influenced by the interdependence of the …

    uiuc Repository record

  4. Thermoelectric properties in gallium telluride-gallium antimonide vacancy compounds

    Yang, Hao (Graduate of Michigan State University)2011

    Thermoelectric materials with high figure of merit, which requires large Seebeck coefficient, large electrical conductivity and low thermal conductivity, are of great importance in solid state cooling and power generation. Solid solution formation is one effective method to achieve low thermal …

    msu Repository record

  5. Reliability and Mode Behavior of Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum Well Heterostructure Lasers

    Kellogg, David AndrewUniversity of Illinois at Urbana-Champaign2015

    Data are presented on ten-stripe AlxGa1-xAs-GaAs-In yGa1-yAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al2O3 polishing compound or 10-mum diameter Al powder results …

    uiuc Repository record

  6. Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices

    Klem, John FrederickUniversity of Illinois at Urbana-Champaign2014

    Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ films and GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ across its entire …

    uiuc Repository record

  7. Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide

    Korb, Harold WilfredUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971

    uiuc Repository record

  8. High-Performance Indium Gallium Phosphide/gallium Arsenide Heterojunction Bipolar Transistors

    Ahmari, David AbbasUniversity of Illinois at Urbana-Champaign2015

    To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and …

    uiuc Repository record

  9. Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers

    Coleman, James JosephUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:13Z (GMT). No. of bitstreams: 1 7606730.pdf: 2847725 bytes, checksum: 538397f02a07c1415ab059d85212392e (MD5) Previous issue date: 1975

    uiuc Repository record

  10. Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers

    Chan, Richard T.University of Illinois at Urbana-Champaign2015

    Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an …

    uiuc Repository record

  11. Annealing Studies of Beryllium in Gallium-Arsenide and Gallium Arsenide Phosphide

    McLevige, William VictorUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:49Z (GMT). No. of bitstreams: 1 7811267.pdf: 3853791 bytes, checksum: a0f2801cbd42501b2dbbe4b3a6d222d7 (MD5) Previous issue date: 1978

    uiuc Repository record

  12. Aluminum Gallium Arsenide / Gallium Arsenide Heterojunction Phototransistors for Fiber-Optic Communications

    Milano, Raymond AnthonyUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:55:08Z (GMT). No. of bitstreams: 1 8009108.pdf: 3346923 bytes, checksum: da74c95de718b6d1823ca180b76d249e (MD5) Previous issue date: 1979

    uiuc Repository record

  13. Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide

    Wolford, Donald James, Jr.University of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:55:11Z (GMT). No. of bitstreams: 1 8009215.pdf: 14760264 bytes, checksum: 3f036ee1b4df72f7e4d97b2045a7536b (MD5) Previous issue date: 1979

    uiuc Repository record

  14. Foundations of Ohmic Contact Formation on Aluminum Gallium Nitride/gallium Nitride Heterostructures

    Mohammed, Fitih MustefaUniversity of Illinois at Urbana-Champaign2015

    Aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) have tremendous potential for application in high frequencies, high temperatures and microwave and mm power amplifications. Fabrication of Ohmic contacts for such devices that meet the stringent …

    uiuc Repository record

  15. Laser Operation of Solution-Grown Aluminum Gallium Arsenide Phosphide Andindium Gallium Phosphide

    Burnham, Robert DannerUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:38:43Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7206877.PDF: 1704856 bytes, checksum: 9ae38236ce311387ebe47a74a54ebe63 (MD5) Previous issue date: 1971

    uiuc Repository record

  16. Lifetime Spectra of Gallium Arsenide-Phosphide and Nitrogen-Doped Gallium Arsenide-Phosphide

    Lee, Michael H.University of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:39:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7511795.PDF: 4228710 bytes, checksum: b6bf26e7d08a16c7f80c48cf235d52c1 (MD5) Previous issue date: 1974

    uiuc Repository record

  17. Acceptor Behavior of Implanted Beryllium in Gallium-Arsenide and Gallium Arsenide-Phosphide

    Chatterjee, Pallab KumarUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:22Z (GMT). No. of bitstreams: 1 7624056.pdf: 6487442 bytes, checksum: 2c2f82ebf4bd3de34fb997cc35bb9693 (MD5) Previous issue date: 1976

    uiuc Repository record

  18. Lifetime spectra of gallium arsenide phosphide and nitrogen-doped gallium arsenide phosphide

    Lee, Michael H.2012

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-18T21:10:02Z No. of bitstreams: 1 1974_lee.pdf: 4550212 bytes, checksum: 90dd9031c1f8520031f387a0967a1e6a (MD5)

    uiuc Repository record

  19. Gallium-based Ultraviolet Nanoplasmonics

    Yang, Yang2013

    … proposed and demonstrated that gallium is a highly-promising and compelling material for UV nanoplasmonics through synthesis of size-controlled nanoparticle arrays, EM modeling of local field enhancement, ellipsometric and spatial characterization of the arrays, and analytical …

    duke Repository record

  20. Electrochemistry of Gallium-Arsenide

    Benard, David JamesUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:38:50Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7309878.PDF: 3310882 bytes, checksum: 28d84dc2c6a3cc89e5739272a5e57051 (MD5) Previous issue date: 1972

    uiuc Repository record

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