Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays

Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, strain-induced changes of the band structure, and their effects on laser performance. Experimental characterization of various aspects of both single-stripe devices and laser arrays is described.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Beernink, Kevin John

Contributors dc:contributor

• Coleman, James J.

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI9314844

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71988