Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays
Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, strain-induced changes of the band structure, and their effects on laser performance. Experimental characterization of various aspects of both single-stripe devices and laser arrays is described.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign