Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays
type: CreativeWork
description: Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, strain-induced changes of the band structure, and their effects on laser performance. Experimental characterization of various aspects of both single-stripe devices and laser arrays is described.
abstract: Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, strain-induced changes of the band structure, and their effects on laser performance. Experimental characterization of various aspects of both single-stripe devices and laser arrays is described.
author: Beernink, Kevin John
keywords: Engineering, Electronics and Electrical
date published: 2014-12-16T22:23:02Z
date modified: 2026-07-22T22:26:05Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/71988