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University of Illinois at Urbana-Champaign

Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide

Abstract

dc:description

Made available in DSpace on 2014-12-12T20:55:11Z (GMT). No. of bitstreams: 1 8009215.pdf: 14760264 bytes, checksum: 3f036ee1b4df72f7e4d97b2045a7536b (MD5) Previous issue date: 1979

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2014

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Wolford, Donald James, Jr.

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(UMI)AAI8009215
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/66226

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Wolford, Donald James, Jr.. Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide. Dissertation thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/66226