Layer disordering and aluminum-gallium interchange in aluminum-gallium arsenide - gallium-arsenide quantum well heterostructures

In the experiments described here, Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs superlattice and quantum well heterostructure (QWH) crystals have been used as test vehicles to study Al-Ga interdiffusion. The data demonstrate that Al-Ga interchange is strongly influenced by the interdependence of the crystal surface-ambient interaction and the Fermi-level effect. We have investigated the crystal surface-ambient interaction by varying both the surface encapsulation condition (e.g., SiO$\sb2$-cap, Si$\sb3$N$\sb4$-cap) and the anneal ambient (As-rich, Ga-rich). The Fermi-level effect has been examined for QWH crystals doped with either donor or acceptor impurities during crystal growth and annealed, and for crystals converted to n-type conductivity by high-temperature Si diffusion or by Si$\sp+$ ion implantation and annealing.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Guido, Louis Joseph

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1989 Guido, Louis Joseph

Language dc:language

eng

Identifier

AAI8916256
(UMI)AAI8916256

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/23209