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University of Illinois at Urbana-Champaign
Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures
Abstract
dc:descriptionWhile Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\times$ 10$\sp{18}$ cm$\sp{-3}$ was the highest reported for which a smooth GaAs surface was maintained. In addition, incorporation of Mn as a p-dopant in GaAs during MBE growth has been demonstrated to result in a low carrier concentration and a ripple-structure surface morphology most likely due to Mn segregation on the GaAs surface or a reaction with the GaAs substrate.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Wu, Chih-Hsyong
- Contributors dc:contributor
-
- Hsieh, Kuang-Chien
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1992 Wu, Chih-Hsyong
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9305734
(UMI)AAI9305734 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/21179