{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21179"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21179","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures","abstract":"While Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\\times$ 10$\\sp{18}$ cm$\\sp{-3}$ was the highest reported for which a smooth GaAs surface was maintained. In addition, incorporation of Mn as a p-dopant in GaAs during MBE growth has been demonstrated to result in a low carrier concentration and a ripple-structure surface morphology most likely due to Mn segregation on the GaAs surface or a reaction with the GaAs substrate.","abstract_html":"While Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\\times$ 10$\\sp{18}$ cm$\\sp{-3}$ was the highest reported for which a smooth GaAs surface was maintained. In addition, incorporation of Mn as a p-dopant in GaAs during MBE growth has been demonstrated to result in a low carrier concentration and a ripple-structure surface morphology most likely due to Mn segregation on the GaAs surface or a reaction with the GaAs substrate.","abstract_has_math":true,"creators":["Wu, Chih-Hsyong"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Engineering","degree_department":null,"school":null,"contributors":["Hsieh, Kuang-Chien"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:00:46Z","date_published":"2011-05-07T13:00:46Z","updated_at":"2026-07-22T22:25:17Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1992 Wu, Chih-Hsyong"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9305734","(UMI)AAI9305734"],"render_values":[{"text":"AAI9305734","href":null,"code":true},{"text":"(UMI)AAI9305734","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21179","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hsieh, Kuang-Chien"]},{"key":"dc:creator","label":"Author","values":["Wu, Chih-Hsyong"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:00:46Z","10000-01-01","1992"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1992 Wu, Chih-Hsyong"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9305734","(UMI)AAI9305734","http://hdl.handle.net/2142/21179"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["While Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\\times$ 10$\\sp{18}$ cm$\\sp{-3}$ was the highest reported for which a smooth GaAs surface was maintained. In addition, incorporation of Mn as a p-dopant in GaAs during MBE growth has been demonstrated to result in a low carrier concentration and a ripple-structure surface morphology most likely due to Mn segregation on the GaAs surface or a reaction with the GaAs substrate.","\"In this work, a study has been conducted to investigate and evaluate the effectiveness of using the various Mn-containing sources so as to diffuse Mn into GaAs, maintaining a smooth surface morphology and high doping concentration. The ampoule sealing technique has been used to perform the diffusion experiments. The various Mn-containing sources included separate solid sources of Mn, MnAs, and Mn$\\sb3$As in the quartz ampoule as well as a Mn thin film deposited directly onto the substrates by electron beam evaporation. The results indicate that a very high carrier concentration as well as smooth surface can be obtained. Such depends critically on the choice of diffusion source, As overpressure, and surface encapsulation. The effect of background doping on the diffusion of Mn and a comparison of the diffusion rate of Mn with those of various p-dopant are demonstrated. The work has been further extended so as to study the optical properties of AlGaAs following Mn diffusion. In addition, the effects of Mn diffusion on both the impurity-induced layer disordering (IILD) and microstructure of undoped AlGaAs-GaAs superlattices (SLs) under various As overpressure are discussed. The interstitial-substitutional mechanism involving either Column III vacancies or the \"\"kick-out\"\" mechanism, depends on the surface ambient during diffusion, such has been proposed so as to explain the behavior of the Mn incorporated into GaAs and GaAs-AlGaAs heterostructures.\"","Made available in DSpace on 2011-05-07T13:00:46Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9305734.pdf: 5308471 bytes, checksum: e0099bede4a2229aab4703bdbb7d7b70 (MD5) Previous issue date: 1992","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:49:01Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:22:15-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures"]}]}],"canonical_facts":{"dc:contributor":["Hsieh, Kuang-Chien"],"dc:creator":["Wu, Chih-Hsyong"],"dc:date":["2011-05-07T13:00:46Z","10000-01-01","1992"],"dc:description":["While Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\\times$ 10$\\sp{18}$ cm$\\sp{-3}$ was the highest reported for which a smooth GaAs surface was maintained. In addition, incorporation of Mn as a p-dopant in GaAs during MBE growth has been demonstrated to result in a low carrier concentration and a ripple-structure surface morphology most likely due to Mn segregation on the GaAs surface or a reaction with the GaAs substrate.","\"In this work, a study has been conducted to investigate and evaluate the effectiveness of using the various Mn-containing sources so as to diffuse Mn into GaAs, maintaining a smooth surface morphology and high doping concentration. The ampoule sealing technique has been used to perform the diffusion experiments. The various Mn-containing sources included separate solid sources of Mn, MnAs, and Mn$\\sb3$As in the quartz ampoule as well as a Mn thin film deposited directly onto the substrates by electron beam evaporation. The results indicate that a very high carrier concentration as well as smooth surface can be obtained. Such depends critically on the choice of diffusion source, As overpressure, and surface encapsulation. The effect of background doping on the diffusion of Mn and a comparison of the diffusion rate of Mn with those of various p-dopant are demonstrated. The work has been further extended so as to study the optical properties of AlGaAs following Mn diffusion. In addition, the effects of Mn diffusion on both the impurity-induced layer disordering (IILD) and microstructure of undoped AlGaAs-GaAs superlattices (SLs) under various As overpressure are discussed. The interstitial-substitutional mechanism involving either Column III vacancies or the \"\"kick-out\"\" mechanism, depends on the surface ambient during diffusion, such has been proposed so as to explain the behavior of the Mn incorporated into GaAs and GaAs-AlGaAs heterostructures.\"","Made available in DSpace on 2011-05-07T13:00:46Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9305734.pdf: 5308471 bytes, checksum: e0099bede4a2229aab4703bdbb7d7b70 (MD5) Previous issue date: 1992","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:49:01Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:22:15-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9305734","(UMI)AAI9305734","http://hdl.handle.net/2142/21179"],"dc:language":["eng"],"dc:rights":["Copyright 1992 Wu, Chih-Hsyong"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures"],"dc:type":["text"],"thesis:degree_discipline":["Materials Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:17Z"}