Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices

Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ films and GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows that good quality material can be obtained, but that the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Klem, John Frederick

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8803091

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69375