{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69375"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69375","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices","abstract":"Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ films and GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows that good quality material can be obtained, but that the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.","abstract_html":"Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ films and GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows that good quality material can be obtained, but that the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.","abstract_has_math":true,"creators":["Klem, John Frederick"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:05:26Z","date_published":"2014-12-15T19:05:26Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8803091"],"render_values":[{"text":"(UMI)AAI8803091","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69375","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Klem, John Frederick"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:05:26Z","10000-01-01","1987"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69375","(UMI)AAI8803091"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ films and GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows that good quality material can be obtained, but that the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.","Strained layer GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$/GaAs superlattices are characterized by x-ray diffraction, photoluminescence, photoreflectance, and optical absorption. Structural parameters derived from a kinematical x-ray diffraction model are used in conjunction with the results of optical characterization and an envelope function approximation bandstructure model to estimate the GaAs/GaSb band alignment. These results indicate that the superlattices are Type II.","Made available in DSpace on 2014-12-15T19:05:26Z (GMT). No. of bitstreams: 1 8803091.pdf: 4465859 bytes, checksum: 80c0d865a2f9e6c7cac812974cd13236 (MD5) Previous issue date: 1987","Embargo set by: Seth Robbins for item 69541 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","135 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987."]},{"key":"dc:title","label":"Title","values":["Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices"]}]}],"canonical_facts":{"dc:creator":["Klem, John Frederick"],"dc:date":["2014-12-15T19:05:26Z","10000-01-01","1987"],"dc:description":["Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ films and GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$ across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows that good quality material can be obtained, but that the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.","Strained layer GaAs$\\sb{\\rm 1-x}$Sb$\\sb{\\rm x}$/GaAs superlattices are characterized by x-ray diffraction, photoluminescence, photoreflectance, and optical absorption. Structural parameters derived from a kinematical x-ray diffraction model are used in conjunction with the results of optical characterization and an envelope function approximation bandstructure model to estimate the GaAs/GaSb band alignment. These results indicate that the superlattices are Type II.","Made available in DSpace on 2014-12-15T19:05:26Z (GMT). No. of bitstreams: 1 8803091.pdf: 4465859 bytes, checksum: 80c0d865a2f9e6c7cac812974cd13236 (MD5) Previous issue date: 1987","Embargo set by: Seth Robbins for item 69541 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","135 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987."],"dc:identifier":["http://hdl.handle.net/2142/69375","(UMI)AAI8803091"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:00Z"}