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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 64 for “"Capacitance-voltage"”.
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Analysis of inductance-capacitance voltage-controlled oscillators
This thesis focuses on analysis of inductance-capacitance voltage-controlled oscillators (LC VCOs), specifically, double switch cross-coupled oscillators. Fundamentals on LC VCOs, like oscillation conditions, classical LC VCO architectures, inductor and capacitor choices, and phase noise …
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Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs
There is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for …
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Electrical properties of metal semiconductor contacts - metals on MoS2: a case study
… Schottky-Mott rules are discussed. The current-voltage measurement and capacitance-voltage measurement are analyzed considering the role of the work function. We mainly focus on metal semiconductor contacts on molybdenum disulfide (MoS2). The properties of bulk and monolayer molybdenum disulfide …
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Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
… technique with the time-dependent high-frequency capacitance-voltage measurements.
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Electrical characterization of thin film nanostructure templates
… created with the system are analyzed with capacitance-voltage measurement techniques to provide insight into device operation. Ni is deposited into porous alumina templates to create Ni nanostructures.
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Physical Realizations of Memory Capacitive Systems
… suggested memcapacitor shows hysteretic charge-voltage and capacitance-voltage curves, and both negative and diverging capacitance within certain ranges of the field. This proposal can be easily realized experimentally, and indicates the possibility of information storage in memcapacitive …
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Effects of Depth Variation of Substrate Dopant Impurity Concentration on the Interface Trap Density Determination in Mos Devices (Semiconductor)
… density determination using the high-frequency capacitance-voltage (HFCV) or Terman method with a constant dopant concentration assumption has been quantitatively studied. A systematic correction scheme for nonconstant dopant concentration has been designed. Even if the substrate dopant …
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Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
… body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) …
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Characterization of organic field effect transistors for OLED displays
… pixel drivers. The contact resistance, flat band voltage, and mobility are extracted from top contact and bottom contact transistors with current-voltage (I-V) and low frequency capacitance-voltage (C-V) measurements. Extraction of contact resistance is found to be crucial in characterization of …
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Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide
… spectroscopy, low temperature photoluminescence, capacitance-voltage and Hall-effect measurements. The concentration of deep levels in these samples was determined by constant capacitance deep level transient spectroscopy. After hydrogenation, the concentration of Si donors in n-type GaAs and the …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
… Schottky barrier height is observed from capacitance-voltage (C-V) measurements. Temperature-dependent measurements suggest the existence of an inhomogeneous Schottky barrier. The breakdown voltage is enhanced from 732 V for a regular SBD to 1045 V for a MIS SBD with the ultrathin BN …
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Study of deep level defects of N+-CdS/P-CdTe solar cells
… excellent stability and reliability. Current-voltage and capacitance-voltage measurements of CdTe photovoltaic devices at different temperatures can provide valuable information about non-idealities in the n-p semiconductor junction. There are certain limitations which limit the efficiency of …
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Defect spectroscopy on Cu(In,Ga)(S,Se) 2 -based heterojunction solar cells: role of the damp-heat treatment
… investigated. The fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp-heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subject non-encapsulated test cells to damp-heat exposure at 85C ambient temperature and …
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Ge photodetectors for Si microphotonics
… by the oxidation of Si epilayers grown on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1.
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Elucidating efficiency losses in cuprous oxide (Cu₂O) photovoltaics and identifying strategies for efficiency improvement
… spectroscopy, quantum efficiency, current-voltage, and capacitance-voltage measurements. Then, these devices were modeled using SCAPS-1D, a numerical simulation package, as well as MATLAB for analytical solutions. This simulation enabled a quantitative breakdown of efficiency losses in Cu …
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Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques
… which has the potential to minimize threshold voltage variation due to reduced random dopant fluctuations. However, there is little known about carrier mobility in Si nanowire MOSFETs. Because of the different crystal surface orientations, the nanowire sidewalls are expected to influence …
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Interfacial Structures of Oxides on GaAs
… GaAs. A correlation between high-low frequency capacitance-voltage (C-V) phenomenon and physical interfacial structure property has been derived by HRTEM. A thin oxide epilayer on GaAs has been identified and proposed as the key factor to solve the surface dangling bond problem. X-ray …
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Computer Modeling of Silicon Quantum Dot Floating -Gate Flash Memory Devices
… the quantum-dot electronic structure, device capacitance-voltage characteristics and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters. In the simulation of a single rectangular quantum-dot floating gate, we focus on the effects on the …
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Integrated silicon field-effect sensors and microfluidics for biomolecular detection
… silicon sensor. The variable depletion capacitance is precisely measured, indicating changes in sensor surface potential of less than 30[micro]V. The integrated microfluidic channels enable the delivery of small (nanoliter-scale) amounts of fluid directly to the sensors. …
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Spintronic and plasmonic applications of electrodeposition on semiconductors
… Plasmonics.<br/>Firstly, the excellent current-voltage and capacitance-voltage characteristics of electrodeposited Schottky barriers indicate that they have an ideality factor close to unity and that the reverse bias leakage is orders of magnitude smaller than in evaporated Schottky barriers. …
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