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University of Illinois at Urbana-Champaign
Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
Abstract
dc:descriptionGeneration and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Lin, Wallace Wan-Li
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8803118
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69376