{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69376"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69376","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons","abstract":"Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.","abstract_html":"Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.","abstract_has_math":true,"creators":["Lin, Wallace Wan-Li"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:05:26Z","date_published":"2014-12-15T19:05:26Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8803118"],"render_values":[{"text":"(UMI)AAI8803118","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69376","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Lin, Wallace Wan-Li"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:05:26Z","10000-01-01","1987"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69376","(UMI)AAI8803118"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.","Two interface trap species were detected in all capacitors. Boron hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8 keV electron beam is removed. Higher trap generation rate, trap density and boron deactivation percentage were observed during irradiation in the oxide subjected to DI water rinse, no post-oxidation anneal (in Argon), or no post-metallization anneal (in forming gas). Results suggest that the two traps are due to intrinsic dangling bonds initially hydrogenated (Si-H or O-H) or strained (Si-O). The hydrogen bond model is further supported by a one-to-one experimental correlation between the annealing or hydrogenation of the interface traps and the hydrogenation of the boron acceptors.","Made available in DSpace on 2014-12-15T19:05:26Z (GMT). No. of bitstreams: 1 8803118.pdf: 3598184 bytes, checksum: 1bba961086d9ba710043fde8da7fd898 (MD5) Previous issue date: 1987","Embargo set by: Seth Robbins for item 69542 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","117 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987."]},{"key":"dc:title","label":"Title","values":["Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons"]}]}],"canonical_facts":{"dc:creator":["Lin, Wallace Wan-Li"],"dc:date":["2014-12-15T19:05:26Z","10000-01-01","1987"],"dc:description":["Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.","Two interface trap species were detected in all capacitors. Boron hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8 keV electron beam is removed. Higher trap generation rate, trap density and boron deactivation percentage were observed during irradiation in the oxide subjected to DI water rinse, no post-oxidation anneal (in Argon), or no post-metallization anneal (in forming gas). Results suggest that the two traps are due to intrinsic dangling bonds initially hydrogenated (Si-H or O-H) or strained (Si-O). The hydrogen bond model is further supported by a one-to-one experimental correlation between the annealing or hydrogenation of the interface traps and the hydrogenation of the boron acceptors.","Made available in DSpace on 2014-12-15T19:05:26Z (GMT). No. of bitstreams: 1 8803118.pdf: 3598184 bytes, checksum: 1bba961086d9ba710043fde8da7fd898 (MD5) Previous issue date: 1987","Embargo set by: Seth Robbins for item 69542 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","117 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987."],"dc:identifier":["http://hdl.handle.net/2142/69376","(UMI)AAI8803118"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:00Z"}