Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
type: CreativeWork
description: Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.
abstract: Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.
author: Lin, Wallace Wan-Li
keywords: Engineering, Electronics and Electrical
date published: 2014-12-15T19:05:26Z
date modified: 2026-07-22T22:26:00Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/69376