Effects of Depth Variation of Substrate Dopant Impurity Concentration on the Interface Trap Density Determination in Mos Devices (Semiconductor)

The effect of dopant impurity concentration variation with depth on the interface trap density determination using the high-frequency capacitance-voltage (HFCV) or Terman method with a constant dopant concentration assumption has been quantitatively studied. A systematic correction scheme for nonconstant dopant concentration has been designed. Even if the substrate dopant concentration is not available, this correction scheme can still provide an estimation of the error in the interface trap density due to the nonconstant dopant concentration profile.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

1986

Author dc:creator

• Pan, Cheng-Sheng

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8701586

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69346