Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide

There has been a significant interest in the hydrogenation of GaAs because it is found to passivate a variety of deep and shallow impurities. In this study, the concentration of donors and acceptors in high purity n- and p-type GaAs before and after hydrogenation has been investigated by photo-thermal ionization spectroscopy, low temperature photoluminescence, capacitance-voltage and Hall-effect measurements. The concentration of deep levels in these samples was determined by constant capacitance deep level transient spectroscopy. After hydrogenation, the concentration of Si donors in n-type GaAs and the concentration of C acceptors in both n- and p-type GaAs show a significant decrease. An increase in the mobility is observed for the hydrogenated n-type GaAs samples. However, the hydrogenated p-type samples are highly resistive and reliable Hall-effect measurements cannot be obtained. A large reduction in the trap concentration in the hydrogenated samples is observed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Pan, Noren

• Engineering, Electronics and Electrical
• Engineering, Materials Science

Identifier

(UMI)AAI8823222

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69402