Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications

This work demonstrates high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The MIS SBDs show an on/off ratio of ~ 107 and an increased on-resistance due to the insertion of the BN layer. An increased Schottky barrier height is observed from capacitance-voltage (C-V) measurements. Temperature-dependent measurements suggest the existence of an inhomogeneous Schottky barrier. The breakdown voltage is enhanced from 732 V for a regular SBD to 1045 V for a MIS SBD with the ultrathin BN layer, which can be ascribed to the increased Schottky barrier height and reduced leakage currents. This work provides a promising way to optimize the performance of β-Ga2O3-based devices for power electronics.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Masters

Discipline thesis:degree_discipline

Engineering

Grantor

Rice University

Year dc:date.issued

2023

Author dc:creator

• Xu, Mingfei

Advisor dc:contributor.advisor

• Zhao, Yuji

• Ga2O3
• Boron Nitride
• Ultrawide Bandgap Semiconductor
• Schottky Barrier Diode
• Pulsed Laser Deposition

Statement dc:rights

• Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1911/115415

OAI identifier oai:identifier

oai:repository.rice.edu:1911/115415