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University of Illinois at Urbana-Champaign
Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy
Abstract
dc:descriptionUsing the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\sb{\rm T}$ and 119 GHz for f$\sb{\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Thomas, Sunil
- Contributors dc:contributor
-
- Stillman, Gregory E.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9834751
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81232