{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81232"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81232","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy","abstract":"Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\\sb{\\rm T}$ and 119 GHz for f$\\sb{\\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.","abstract_html":"Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\\sb{\\rm T}$ and 119 GHz for f$\\sb{\\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.","abstract_has_math":true,"creators":["Thomas, Sunil"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:09Z","date_published":"2015-09-25T20:10:09Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9834751"],"render_values":[{"text":"(MiAaPQ)AAI9834751","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81232","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["Thomas, Sunil"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:09Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81232","(MiAaPQ)AAI9834751"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\\sb{\\rm T}$ and 119 GHz for f$\\sb{\\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.","Made available in DSpace on 2015-09-25T20:10:09Z (GMT). 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For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\\sb{\\rm T}$ and 119 GHz for f$\\sb{\\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.","Made available in DSpace on 2015-09-25T20:10:09Z (GMT). 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