Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy
Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\sb{\rm T}$ and 119 GHz for f$\sb{\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign