Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 64 for “"HBT"”.
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Large Signal HBT Model and Integrated Circuit Design Using 300-Ghz Indium Phosphide HBT Technology
… measured DC and high-frequency data from single HBTs is achieved. In terms of circuit verification, high-gain and wideband variable gain amplifier (VGA) is developed using a negative-RE approach. This circuit shows a single-ended S21 of 18 dB and a 3-dB bandwidth of 50 GHz, producing a …
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ESD Protected SiGe HBT RFIC Power Amplifiers
… in a commercially available 0.5 ìm SiGe-HBT process. The partially protected WLAN PA was fabricated and packaged in a 3mm x 3mm Fine Pitch Quad Flat Package FQFP-N 12 Lead package and had a measured ESD protection rating of ± 1kV standard Human Body Model (HBM) ESD test. The simulated …
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An HBT magnetic sensor with integrated 3-dimensional magnetic structures
… an InP/InGaAs heterojunction bipolar transistor (HBT) which has been fabricated to be compatible with high frequency epilayer structure and processes. In this work, the complete fabrication process for the HBT magnetic sensors has been developed, using standard, transferrable process modules. …
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Modeling and Design of 3-Terminal Perovskite/Silicon HBT Tandem Solar Cell
L'abstract è presente nell'allegato / the abstract is in the attachment
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5-6 GHz RFIC Front-End Components in Silicon Germanium HBT Technology
… use of SiGe heterojunction bipolar transistors (HBTs), while coexisting Si CMOS offers compatibility with digital circuitry for high level 'system-on-a-chip' integration. The work presented in this thesis focuses on the development of a SiGe RFIC front-end for operation in the U-NII bands. …
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Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments
… heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond …
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Compact device modeling and millimeter-wave oscillator design for III-V HBT technology
The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly …
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Dynamic Range Analysis and High-Speed Integrated Circuit Designs Using Indium Phosphide HBT Technology
Two integrated circuits using InP DHBT technology have been demonstrated with the aid of the accurate large-signal and noise models developed in this work. The true logarithmic amplifier shows the bandwidth of 22 GHz, which is significantly higher than the previous 6 GHz in literature. This circuit …
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Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications
… identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and …
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Design and Characterization of RFIC Voltage Controlled Oscillators in Silicon Germanium HBT and Submicron MOS Technologies
… (SiGe) Heterojunction Bipolar Transistors (HBTs) for a cross-coupled collectors circuit and Graded-Channel MOS (GC-MOS) transistors for a complementary (CMOS) implementation. The circuits were fabricated using the Motorola 0.4 μm CDR1 SiGe BiCMOS process, which consists of four …
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Excited state proton transfer in 2-substituted benzothiazoles
… of 2-(2'-hydroxyphenyl)benzothiazole (HBT) and related compounds has been studied as a function of solvent, pH or H 0 and temperature. Measurements of absorption and fluorescence spectra and fluorescence decay profiles under these various conditions have been combined with theoretical …
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Measuring Hanbury Brown-Twiss correlations of pions in high-energy nucleus-nucleus collisions
… correlations due to the Hanbury Brown-Twiss (HBT) effect for identical pions from the collision debris of a high-energy collision between two heavy nuclei. The basic ingredients of HBT correlations are: the exchange symmetry ( antisymmetry) of the wave function for identical bosons ( fermions) …
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Analysis and design of low-noise amplifiers in silicon-germanium hetrojunction bipolar technology for radar and communication systems
… Hetro-Junction Bipolar Transistor (SiGe HBT) low-noise amplifiers (LNAs). The LNA design trade-off space is presented and methods for achieving an optimized design are discussed. In Chapter 1, we review the importance of LNAs and the benefits of SiGe HBT technology in high frequency …
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On the stability of rotor bearing systems based on Hopf bifurcation theory
… by applying the Hopf bifurcation theory (HBT) to the equations of motion. A method is developed for predicting the stability envelope of rotor-bearing systems using HBT. Results are compared with published literature obtained using a trial-and-error method. A method based on HBT is …
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Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications
… heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the …
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Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers
… and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter …
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Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy
… well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\sb{\rm T}$ and 119 GHz for …
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Two-Particle Correlations at 40, 80, and 158 AGeV Pb-Au Collisions
… momentum correlations of like-sign pions (HBT interferometry) from Pb-Au collisions at beam energies of 40, 80 and 158 AGeV is presented. The three-dimensional correlation function C_2, depending on the relative momentum components of the particle pair, was parameterized using a …
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Submicron Scaling of Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths
This work extends the operating speed of InP HBTs to frequencies of fT = 604 GHz though aggressive delay reductions and advanced fabrication processes. Delay reduction is employed by a combination of vertical scaling, lateral scaling, and epitaxial engineering to reduce the transit and charging …
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Silicon-based Microwave/Millimeter-wave Monolithic Power Amplifiers
… power amplifiers: 1) Silicon-Germanium (SiGe) HBT and 2) Complementary metal-oxide semiconductor (CMOS). SiGe HBT has become a viable candidate for PA development since it exhibits higher gain and higher breakdown voltage limits compared to CMOS, while remaining compatible with BiCMOS …
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