Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition

Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Reed, Andrew Dean

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8908811

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69420