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Showing 1 to 11 of 11 for “"n-type GaAs"”.
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Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)
… carrier concentrations and mobilities in n-type GaAs, InP, and their related direct gap semiconductor alloys is presented along with a thorough treatment of those factors affecting the measurement. The design and construction of the equipment used to make measurements from 4.2 K to 373 K are …
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Corrosion and corrosion suppression on n-type gallium arsenide semiconductor liquid-junction solar cells
N-type GaAs is a potentially useful semiconductor in liquid junction type solar cells. Corrosion and corrosion suppression on an n-type GaAs semiconductor in both light and dark has been studied. The application of non-electroactive layers for corrosion suppression on semiconductor electrodes is a …
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Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide
… a significant interest in the hydrogenation of GaAs because it is found to passivate a variety of deep and shallow impurities. In this study, the concentration of donors and acceptors in high purity n- and p-type GaAs before and after hydrogenation has been investigated by photo-thermal …
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Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition
Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of …
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
… deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first selected to …
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Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide
… powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make …
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Donor-Induced Layer Disordering via Silicon Diffusion in Aluminum-Gallium Arsenide - Gallium-Arsenide Quantum-Well Heterostructures, and Disorder-Defined Index-Guided Stripe Geometry Laserdiodes
… use of Si diffusion to disorder Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures (QWHs) and quantum-well (QW) p-n junction lasers is described. Under the proper diffusion conditions Si produces n-type conductivity in Al(,x)Ga(,1-x)As layers, and will counterdope (to n-type) initially p-type …
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The effect of high pressure on S and Te-doped GaAs1-xPx
… dependence of the electrical resistivity of n-type GaAs l -x Px is measured to a pressure of 7 kilobars at temperatures of 770, 195 0 , and 300 0 K. The samples are doped with sulfur and tellurium and have carrier concentrations in the 10^18 - 10^19 range. Changes in the resistivity as large as …
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Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide
… powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make …
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A Study of Newtron Irradiation Effects on Gallium Arsenide Semiconductor Materials
Made available in DSpace on 2017-07-06T18:59:35Z (GMT). No. of bitstreams: 3 Yang_Siyuan_MS.pdf: 40469799 bytes, checksum: 1b8400059c7276e82d663b03f596a858 (MD5) Yang_Siyuan_MS_ABS.pdf: 573254 bytes, checksum: 6d52f1d60dcb222b600aa29c8bbb880d (MD5) license.txt: 4813 bytes, checksum: …