{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69420"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69420","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition","abstract":"Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.","abstract_html":"Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.","abstract_has_math":false,"creators":["Reed, Andrew Dean"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:05:42Z","date_published":"2014-12-15T19:05:42Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8908811"],"render_values":[{"text":"(UMI)AAI8908811","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69420","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["Reed, Andrew Dean"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:05:42Z","10000-01-01","1988"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69420","(UMI)AAI8908811"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.","L-optimal and D-optimal statistically designed experiments were used to determine the influence of 14 growth parameters on the donor and acceptor concentrations and the 77 K mobility of MOCVD grown GaAs. The source of the germanium impurity was found to be in the AsH$\\sb3$ and it incorporates via a simple mechanism; the germanium donor concentration is directly proportional to the AsH$\\sb3$ partial pressure and inversely proportional to the TMGa partial pressure. The source of the carbon impurity was found to be the TMGa molecule. There is a complex incorporation mechanism involving the loss of the first methyl radical from gas phase TMGa and the loss of the first hydrogen atom from AsH$\\sb3$ adsorbed on the substrate surface.","Made available in DSpace on 2014-12-15T19:05:42Z (GMT). No. of bitstreams: 1 8908811.pdf: 3089370 bytes, checksum: 561bb9a115b3f882601e8374862e0402 (MD5) Previous issue date: 1988","Embargo set by: Seth Robbins for item 69586 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","111 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988."]},{"key":"dc:title","label":"Title","values":["Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition"]}]}],"canonical_facts":{"dc:contributor":["Stillman, Gregory E."],"dc:creator":["Reed, Andrew Dean"],"dc:date":["2014-12-15T19:05:42Z","10000-01-01","1988"],"dc:description":["Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.","L-optimal and D-optimal statistically designed experiments were used to determine the influence of 14 growth parameters on the donor and acceptor concentrations and the 77 K mobility of MOCVD grown GaAs. The source of the germanium impurity was found to be in the AsH$\\sb3$ and it incorporates via a simple mechanism; the germanium donor concentration is directly proportional to the AsH$\\sb3$ partial pressure and inversely proportional to the TMGa partial pressure. The source of the carbon impurity was found to be the TMGa molecule. There is a complex incorporation mechanism involving the loss of the first methyl radical from gas phase TMGa and the loss of the first hydrogen atom from AsH$\\sb3$ adsorbed on the substrate surface.","Made available in DSpace on 2014-12-15T19:05:42Z (GMT). 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