Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition
type: CreativeWork
description: Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.
abstract: Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.
author: Reed, Andrew Dean
keywords: Engineering, Electronics and Electrical
date published: 2014-12-15T19:05:42Z
date modified: 2026-07-22T22:26:00Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/69420