Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition
Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.
University of Illinois - Urbana-Champaign
Networked Digital Library of Theses and Dissertations
University of Illinois at Urbana-Champaign