Back to results

University of Illinois at Urbana-Champaign

Gallium nitride selective area growth and heteroepitaxy via PAMBE for power device applications

dc:creator Kelly, Frank Putnam

thesis:degree_name Ph.D.

dc:date2024

Abstract

dc:description

Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01

Degree

thesis:*

Name thesis:degree_name: Ph.D.
Level thesis:degree_level: Dissertation
Discipline thesis:degree_discipline: Electrical & Computer Engr
Grantor: University of Illinois at Urbana-Champaign
Year dc:date: 2024

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Kelly, Frank Putnam
Contributors dc:contributor: Kim, Kyekyoon
Bayram, Can
Dallesasse, John
Lee, Minjoo L
Zuo, Jian-Min

Subjects

dc:subject × 7

Rights

dc:rights

Statement dc:rights: Copyright 2024 Frank Kelly
Language dc:language: en, eng

Identifiers

dc:identifier.*

Handle dc:identifier: https://hdl.handle.net/2142/127397
OAI identifier oai:identifier: oai:www.ideals.illinois.edu:2142/127397

Chain of custody

source

Harvested from: University of Illinois - Urbana-Champaign
Base URL: www.ideals.illinois.edu/oai-pmh
Last updated: 2026-07-22
Source record: OAI-PMH GetRecord

related terms

citation

Kelly, Frank Putnam. Gallium nitride selective area growth and heteroepitaxy via PAMBE for power device applications. Dissertation thesis, University of Illinois at Urbana-Champaign, 2024. https://hdl.handle.net/2142/127397

More from University of Illinois - Urbana-Champaign