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Showing 1 to 12 of 12 for “"Pambe"”.
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Gallium nitride selective area growth and heteroepitaxy via PAMBE for power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
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Growth of Gallium Nitride-Based Nitride Semiconductors by PAMBE for Development of Optoelectronic and Microelectronic Devices
… effect transistor (BGJFET), are fabricated by PAMBE and their characteristics are demonstrated to show the high quality of GaN-based nitride films grown by PAMBE.
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Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
Mg-doped GaN films grown at different temperatures are investigated. It is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… grown by plasma-assisted molecular beam epitaxy (PAMBE) are used for the fabrication of GaN-based field-effect transistor (FET) devices such as metal semiconductor FET (MESFET) and high electron mobility transistor (HEMT). In order to investigate the GaN-based FETs, theoretical principles, …
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Structural and Optical Properties of Gan-Based Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
$\rm Al\sb{0.2}Ga\sb{0.8}$N-GaN MQWs grown by PAMBE demonstrate their feasibility for optical device application. The excitonic transition properties observed from the MQW structures suggest the implementation of very thin, $<$50 A, quantum wells for high efficiency and emission uniformity.
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Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy
… SAG by plasma assisted molecular beam epitaxy (PAMBE). The work specifically involved thin film growth, film characterization, device fabrication and device characterization. To develop the SAG technique and study the effect of etchants on single crystal GaN layers during ohmic contact …
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A Critical Study of Gallium Nitride-Based Digital Technology
… films by plasma-assisted molecular beam epitaxy (PAMBE) were discussed. The p-GaN films were grown in Ga-rich regime in order to obtain excellent surface morphology as well as high doping concentration. For the fabrication of BGJFETs, two-step etching was adopted to minimize plasma-induced etch …
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Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy
… a comprehensive study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study of the efficacy of SAG was conducted by comparing it with ion-implantation, a popular technique for improving Ohmic contacts. A consistent …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… This plasma-assisted molecular-beam epitaxy (PAMBE) based GaN SAP technique is capable of reducing leakage by at least four orders of magnitude compared to ICP-RIE etching. Additionally, mixed-conduction diodes, such as, buried p-base merged p-i-n Schottky (BP-MPS) and buried p-base merged …
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Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices
… via plasma-assisted molecular beam epitaxy (PAMBE) at low growth substrate temperatures < 400 °C, but damage to the crystal from the plasma is observed in the form of elevated unintentional background electron concentrations and a textured surface morphology. The plasma is extensively …
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Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
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Development of high-performance GaN-based power transistors
This thesis presents a comprehensive study on the development of GaN-based high-power transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed by our group for Ohmic contact improvement, is utilized to fabricate large-periphery AlGaN / GaN high …