Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE

Mg-doped GaN films grown at different temperatures are investigated. It is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high Mg flux, heavily doped p-type GaN films are obtained. The observation of a very smooth surface for the Mg-doped films grown at T$\sb{\rm s} \ge$ 650$\sp\circ$C suggests a layer-by-layer growth mode with good crystallinity. This fact is due to a large decrease in the activation energy of the diffusion coefficient in the presence of metallic Mg, which promotes the diffusion of Ga adatoms and enhances the step-flow for a layer-by-layer growth.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Myoung, Jae-Min

Contributors dc:contributor

• Kim, Kyekyoon

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI9834718

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82902