Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 46 for “"Power Device"”.
-
CMOS Power Device Modeling and Amplifier Circuits
A power amplifier (PA) is a key part of the RF front-end in transmitters for a local broadband network. Today, commercial PAs are made of III-V HEMT and HBT technology with excellent results. An integrated system-on-chip power amplifier circuit using CMOS technology for cost-effective and …
-
Conceptual design and multidisciplinary optimisation of power device for solar powered aircraft
Solar-powered aircraft is propelled by a photovoltaic cell that converts solar energy into electrical energy. The extra energy is stored in a rechargeable battery for later use when solar energy is not available. The performance of solar-powered aircraft is limited to solar radiation availability, …
-
Gallium nitride selective area growth and heteroepitaxy via PAMBE for power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
-
A Suite of Fast and Efficient Cryptographic Mechanisms for Wireless Ultra-Low Power Device Networks
… applications. Recent advances in the ultra-low power technologies enabled the development of even smaller, more mobile, autonomous devices. Wireless Sensor Networks (WSNs), Smart Dust, and Radio Frequency Identification (RFID) are several examples of this trend and have been applied to a large …
-
Thermal and thermo-mechanical performance of voided lead-free solder thermal interface materials for chip-scale packaged power device
… to maximise thermal performance of electronic devices coupled with the continuing trends on miniaturization of electronic packages require innovative package designs for power devices and modules such as Electronic Control Unit (ECU). Chip scale packaging (CSP) technology offer promising …
-
Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
-
Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices
… examines the packaging of high-temperature SiC power electronic devices. Current-voltage measurements were conducted on as-received and packaged SiC power devices. The planar structure was introduced and developed as a substitution for traditional wire-bonding vertical structure. The planar …
-
The Development of Novel Interconnection Technologies for 3D Packaging of Wire Bondless Silicon Carbide Power Modules
… 3D packaging and integration of silicon carbide power modules. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire …
-
Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
… and conductivity modulation of the power device. The procedure to incorporate the model into IG-Spice and various methods to ensure convergence are described. The IG-Spice IGBT model is presented, including all the physical effects which have been shown to be important in describing …
-
Robustness of Gallium Nitride Power Devices
Power device robustness refers to the device capability of withstanding abnormal events in power electronics applications, which is one of the key device capabilities that are desired in numerous applications. While the current robustness test methods and qualification standards are developed …
-
Supporting Data-Intensive Wireless Sensor Applications using Smart Data Fragmentation and Buffer Management
Recent advances in low power device technology have led to the development of smaller powerful sensors geared for use in Wireless Sensor Networks. Some of these sensors are capable of producing large data packets in a single reading. This becomes a challenging problem given the constraints imposed …
-
Electron-phonon interactions in double layer graphene superfluids
As the scaling of electronic devices continues to decrease, the search for a low- power replacement for complementary metal-oxide semiconductor (CMOS) logic becomes increasingly important. A predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate of excitons in …
-
Modification and Numerical Modelling of Dense Plasma Focus Device
A dense plasma focus device (DPF) is a pulsed power device that generates high energy particles, neutrons and X-rays through rapid compression of the plasma. The presented research investigates the modification of the DPF and use of numerical modelling to predict the neutron yield. The DPF is a 1 …
-
LATERAL POWER DEVICES AND TECHNOLOGIES FOR HIGH VOLTAGE INTEGRATED CIRCUITS
The prime objective of a High Voltage Power Integrated Circuit (HVPIC) is to integrate high power and low power devices on the same wafer. Such a Power Integrated Circuit (PIC) benefits in cost, weight, functionality and reliability. A Lateral MOS controlled Power Device is a key component in such …
-
Constant Conduction Angle Biasing for Class C Monolithic RF Power Amplifiers
… faraway user – base stations continually enforce power control. That is, nearby users must lower their transmit power. In CDMA technology, power control can be as large as 70-80dB. At low power outputs, this greatly impacts the performance of the RF power amplifier (PA) in the cellular device. For …
-
Reliability Evaluation of Large-Area Sintered Direct Bonded Aluminum Substrates for Medium-Voltage Power Modules
… and evaluation of medium voltage (MV) power module packages. Specific focus will be given to the utilization of silver sintering as a bonding method for high temperature, high density power modules. Nano-silver paste and preform will be examined in detail as enabling technologies for a …
-
Cryogenic characteristics of IGBTs
… are now starting to emerge for superconducting devices in the areas of electrical power conversion and management, for example superconducting windings for marine propulsion motors, superconducting fault current limiters and superconducting magnet energy storage (SMES). Many of these …
-
A Wide Bandgap Silicon Carbide (SiC) Gate Driver for High Temperature, High Voltage, and High Frequency Applications
… potential of silicon carbide (SiC) for modern power electronics applications is revolutionary because of its superior material properties including substantially better breakdown voltage, power density, device leakage, thermal conductivity, and switching speed. Integration of gate driver …
-
High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… (WBG) material, experimentally reported GaN power devices result in large leakage currents with lower reverse blocking efficiency. Two major de ciencies result in crippling underperformance in GaN power devices. First, conventional GaN processing methodologies, such as, ion-implantation and …
-
Output Capacitance Loss Measurement and Validation for Low-Voltage Silicon and GaN Devices in DC-DC Converter Applications
… converter topologies which enable high-frequency power conversion, there has been a premise that these converter topologies can help achieve loss-less switching in a power device. However, this theory is not completely true as there even with soft-switching there is some degree of loss associated …
Page 1 of 3