Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications

Landi, Matthew M

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University of Illinois at Urbana-Champaign

Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications

dc:creator Landi, Matthew M

thesis:degree_name Ph.D.

dc:date2024

Abstract

dc:description

Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01

Degree

thesis:*

Name thesis:degree_name: Ph.D.
Level thesis:degree_level: Dissertation
Discipline thesis:degree_discipline: Electrical & Computer Engr
Grantor: University of Illinois at Urbana-Champaign
Year dc:date: 2024

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Landi, Matthew M
Contributors dc:contributor: Kim, Kyekyoon
Bayram, Can
Dallesasse, John
Lee, Minjoo
Sardela, Mauro

Subjects

dc:subject × 8

Rights

dc:rights

Language dc:language: en, eng

Identifiers

dc:identifier.*

Handle dc:identifier: https://hdl.handle.net/2142/127360
OAI identifier oai:identifier: oai:www.ideals.illinois.edu:2142/127360

Chain of custody

source

Harvested from: University of Illinois - Urbana-Champaign
Base URL: www.ideals.illinois.edu/oai-pmh
Last updated: 2026-07-22
Source record: OAI-PMH GetRecord

related terms

citation

Landi, Matthew M. Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications. Dissertation thesis, University of Illinois at Urbana-Champaign, 2024. https://hdl.handle.net/2142/127360

Selective area growth of gallium nitride y plasma-assisted molecular beam epitaxy or wide and ultra-wide bandgap power device applications

Abstract

Degree

Author and committee

Subjects

Rights

Identifiers

Chain of custody

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