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Showing 1 to 20 of 30 for “"Ga2o3"”.
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First-Principles Investigation of Doping and Alloying of β-Ga2O3
<p><em>β</em>-Ga<sub>2</sub>O<sub>3</sub> is an emergent semiconductor for power electronics applications. It has a wide band gap of 4.8 eV and is transparent on the whole spectrum of visible light up to deep ultraviolet. It has a high Baliga figure of merit (BFOM) — a weighted numerical …
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Investigation into digital circuit design with GaAs/Ga2O3 heterostructure MOSFETs
… MOSFETs, with a high-κ dielectric (Ga2O3), and an InGaAs channel. Historically silicon CMOS technology has been the natural choice for digital circuits, however the realisation of GaAs MOSFET digital circuits could allow full integration of RF, optoelectronic and digital circuits on …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is higher than the bandgap of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 …
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Metal-assisted chemical etching of β-gallium oxide
β-Ga2O3, with an ultra-wide bandgap (UWB) of ~ 4.6 – 4.9 eV and bulk substrate availability, has drawn enormous interest in the power electronics community. Fabricating high-aspect-ratio β-Ga2O3 3D nanostructures without surface damage is essential for next-generation power electronics. …
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Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… performance limits in comparison to SiC and GaN. Ga2O3 (4.8 eV) is the only UWBG semiconductor with melt-growth capabilities that has already demonstrated research grade wafers up to 6" in diameter. Ga2O3 is also advantaged by the ability to grow thick, lowly-doped homoepitaxial drift regions from …
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Electro-Thermal Device-Package Co-Design for a High-Temperature Ultra-Wide-Bandgap Gallium-Oxide Power Module
… elevated temperatures. As such, gallium oxide (Ga2O3), an ultrawide-bandgap (UWBG) material with controllable doping and the potential for inexpensive substrates, has presented itself as a potential contender for use in high-temperature power electronics applications. The UWBG of Ga2O3, 4.8 eV …
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Thermally Aware Design Approaches for High Power Density Ultra-Wide Bandgap Power Electronics
… semiconductors like β-type gallium oxide (β-Ga2O3) show promise for the development of next-generation high power density electronics devices such as RF and power electronics. The large bandgap (4.8 eV), high breakdown fields (8 MV/cm), and excellent thermal stability of β-Ga2O3 give promise …
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Microplasma-driven, atomic layer deposition of flexible electronic and photonic nanofilms
… (ALD) of aluminum oxide (Al2O3), gallium oxide (Ga2O3) and Zirconium oxide (ZrO2), driven by arrays of microcavity plasmas (MALD), has been demonstrated. Microplasma has been drawn attention due to its unique characteristics such as high electron density (>1016 cm-3), low temperature (electron …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
This work demonstrates high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray …
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Combinatorial Pulsed Laser Deposition Employing Radially-Segmented Targets: Exploring Orthorhombic (InxGa1−x)2O3 and (AlxGa1−x)2O3 Towards Superlattice Heterostructures
… von metastabilem orthorhombischen κ-Ga2O3 auf der Basis dieser Methode hin zu Multi-Quantengraben (QW) Supergitter (SL) Heterostrukturen für transparente Quantengrabeninfrarotphotodetektoren (QWIPs). Im ersten Teil wird die Methode, welche vertical continuous composition spread (VCCS) …
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Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
In the recent past, ultra-wide bandgap β-Ga2O3 has drawn a significant amount of attention as an emerging wide bandgap semiconductor because of its promising material properties, for example, large bandgap (~ 4.9 eV), high electric breakdown field (~ 8 MVcm-1), hard radiation tolerance, physical …
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Growth and characterization of epitaxial gallium oxide films
… the growth processes of MOVPE-grown (100) β-Ga2O3 films to fulfill the requirements of vertical devices. An in-depth study has been performed to develop the process of growing µm-level thick films with excellent electrical properties in terms of wide doping range and high mobility. The …
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Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels
… emerging wide-bandgap material, Gallium Oxide (Ga2O3), to make arrays of NW channels (or fins) for high-power electronics. Bottom-up AlGaAs/GaAs heterostructure core-shell planar NWs are demonstrated on a wafer scale with excellent yield. Their placement is determined by lithographically …
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Ab initio investigation of layered and low-symmetry oxides and interfaces: multiferroic junctions, TCO’s, and a ferroelectric metal.
… Fouth, a study about the wide-gap semi ondu tor Ga2O3 is presented. By means of beyond-DFT approa hes su h as Hybrid fun tionals, the famous GW method and the pSIC method, we assess the anisotropy of opti al absorption in phase of Ga2O3, supporting the experimental spe tra. In addition, it …
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First Demonstration of beta-phase Gallium Oxide Optical Waveguide in Visible-UV Spectrum
… demonstration of beta-phase gallium oxide (β-Ga2O3) as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). Their propagation losses in the visible spectrum were comprehensively studied via experiments and simulations of the finite difference …
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Computational study of advanced semiconducting materials for next-generation electronic devices
… gallium arsenide (InGaAs) and gallium oxide (Ga2O3), mainly for their superior electronic properties compared to traditional semiconductors. However, a series of major challenges need to be overcome in order for these materials to live up to their promise, including insufficiently high dopant …
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Investigation of new semiconductor materials for wide band-gap devices
… shifting from dominant UV in near pure Ga2O3 to enhanced blue and green in high In containing materials. Spectral band energies also decreased as the In composition increased due to the reduction of the material bandgap. The incorporation of Sn into Ga2O3 alloys was investigated for thin …
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Kinetic studies of ethane dehydrogenation using carbon dioxide as mild oxidant over gallium aluminum mixed oxide
… it is close to 0.7 for ratio above 0.1 and pure Ga2O3. We also evaluated the effects of utilizing CO2 as the mild oxidant in ethane dehydrogenation. Based on the kinetic experiments as well as the catalyst characterization, we propose that CO2 does not directly participate in the ethane …
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Metal-assisted chemical etching of 4H silicon carbide
… substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching …
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